Semiquantitative analysis of surface relief due to martensite formation in Fe-Mn-Si-based shape memory alloys by atomic force microscopy |
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Authors: | D.Z. Liu S.K Ajiwara T. Kikuchi N. Shinya |
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Affiliation: | General Electric Corporate Research and Development , Niskayuna , New York 12309, USA |
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Abstract: | Semiquantitative analysis of the surface relief caused by martensite formation in Fe-Mn-Si-based shape memory alloys has been performed by atomic force microscopy. It is found, for the thermally induced martensite transformation, that all three possible variants of martensite with the same {111} habit plane appear while, for the stress-induced martensite transformation, only one martensite variant is likely to form. For the former case, martensite plates with various variants are formed on the same habit plane in such a way that the shape strains of those plates are self-accommodated macroscopically, but each martensite plate itself is a single variant and not a multivariant plate as has been reported in the literature. For the latter case, it is especially emphasized that all the martensite plates formed in the well 'trained' sample have the same variant, which is one of the most important conditions for exhibiting a good shape memory effect. |
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Keywords: | absorption polarization crystallography optical microscopy crystal structure optical properties |
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