Solid-source doping of hydrogenated amorphous silicon |
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| Authors: | R. A. Street N. M. Johnson J. Walker K. Winer |
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| Affiliation: | Xerox Palo Alto Research Center , Palo Alto, California, 94304, U.S.A. |
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| Abstract: | Abstract Arsenic doping of hydrogenated amorphous silicon (a-Si: H) from a solid source in a remote hydrogen plasma reactor is reported. Arsenic incorporation in the deposited films was directly demonstrated with secondary-ion mass spectrometry, and doping efficiency was determined from d.c. conductivity. The electronic properties of the doped films were indistinguishable from those of conventional r.f. glow discharge deposited a-Si:H. The technique should be applicable to other dopant and alloying elements |
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