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Shuffle-set dislocation nucleation in semiconductor silicon device |
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| Authors: | Satoshi Izumi Hiroyuki Ohta Chisato Takahashi Toshiyuki Suzuki Hiroyasu Saka |
| Institution: | 1. Department of Mechanical Engineering , School of Engineering, The University of Tokyo , Bunkyo-ku, Tokyo 113 8656, Japan izumi@fml.t.u-tokyo.ac.jp;3. Mechanical Engineering Research Laboratory, Hitachi Ltd , Hitachinaka-shi, Ibaraki 312 0034, Japan;4. Eco-Topia Science Institute, Nagoya University , Furo-cho, Nagoya 464 8603, Japan |
| Abstract: | We have found that a shuffle-set dislocation is nucleated in a semiconductor silicon device subjected to severe thermal processing. The dislocation transforms into a dissociated glide-set dislocation after annealing at 500°C. A possible mechanism for the nucleation of a perfect shuffle-set dislocation during thermal processing is that the dislocation nucleus was nucleated at a low temperature during prior ion-implantation processing. |
| Keywords: | dislocation semiconductors silicon shuffle–glide |