Nucleation of misfit dislocations in strained-layer InGaAs on GaAs |
| |
Authors: | H. Sidhom R. Portier |
| |
Affiliation: | 1. Département d'Etude des Matériaux , EDF-EMA , Route de Sens-Ecuelles, Moret sur Loing, 77250, France;2. CECM/CNRS , 15 rue Georges Urbain, 94407, Vitry Cedex, France;3. ENSCP Laboratoire de Métallurgie Structurale , 11 rue Pierre et Marie Curie, 75005, Paris, France |
| |
Abstract: | Abstract Austenitic 316L stainless steel alloys annealed at 550°C for 100 h present a few ferrite precipitates surrounded by a new interfacial phase, here called the I-phase, that develops at the level of the austenite/ferrite interface. The I-phase presents the typical patterns of an icosahedral quasicrystal with a primitive hypercubic lattice of parameter A = 0.63 nm. The marked orientation relationships between the I-phase and the ferrite precipitates strongly suggest that this phase results from a decomposition of the ferrite and not of the austenite. The I-phase is metastable and transforms eventually after annealing at 700°C to the stable crystalline σ-phase. |
| |
Keywords: | |
|
|