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Amorphization of TiNi induced by high-pressure torsion
Authors:J. Y. Huang  Y. T. Zhu  X. Z. Liao  R. Z. Valiev
Affiliation:1. Department of Physics , Boston College , Chestnut Hill, Massachusetts 02467, USA;2. Los Alamos National Laboratory , Materials Science and Technology Division , Los Alamos, New Mexico 87545, USA;3. Institute of Physics of Advanced Materials , Ufa State Aviation Technical University , 12 K. Marx St., Ufa 450000, Russia
Abstract:Using high-resolution electron microscopy, we investigated the initial stages of high-pressure-torsion-induced crystalline-to-amorphous transformation of TiNi. It is found that the deformation-induced amorphization initiated from dislocation core regions in the interior of grains and from grain boundaries. It is believed that both the energy stored in the dislocations and the energy stored in the grain boundaries contribute significantly to driving the crystalline-to-amorphous transformation.
Keywords:amorphous semiconductors  thin films  chalcogenide glasses  optical properties  refractive index  far-infrared reflectivity
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