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Quantification of dislocation structures at high resolution by atomic force microscopy of dislocation etch pits |
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| Authors: | P Sadrabadi K Durst M Göken W Blum |
| Institution: | 1. Department of Materials Science , University of Erlangen-Nürnberg , Martensstr. 5, 91058 Erlangen, Germany;2. Siemens Energy, Inc. , 4400 Alafaya Trail, Orlando, FL 32826, USA peiman.sadrabadi@siemens.com;4. Department of Materials Science , University of Erlangen-Nürnberg , Martensstr. 5, 91058 Erlangen, Germany |
| Abstract: | Atomic force microscopy of dislocation etch pit structures is a convenient means of characterising the dislocation structure in etchable materials at high resolution for dislocation spacing extending down to 25 nm . This is demonstrated for single crystals of CaF2. The local deformation zone generated around nanoindents at ambient temperature and the low-angle boundaries generated in the bulk during uniaxial compression at elevated temperatures are presented as examples. |
| Keywords: | atomic force microscopy etch pits free dislocations subgrain boundaries disorientations nanoindentation |