Interpretation of the low-temperature photoconductivity in a-Si

Abstract

The paper is concerned with the interpretation of steady-state photoconductivity results on undoped a-Si at temperatures of 50K and below which lead to an essentially constant value of the (photogeneration efficiency x mobility x lifetime) product νμτ?10^?11 cm² V^?1. Measurements on p⁺-i-n⁺ junctions and Cr-i-n⁺ barriers were carried out to determine the above parameters separately: (i) steadystate reverse saturation currents gave a generation efficiency of ν? 5×10-² below 50K, suggesting that geminate recombination limits the generation process. (ii) the electron drift mobility μ_e through the tail states and the charge extracted from the absorption region of the incident light were investigated by transient experiments, these showed that μ_eτ_a is limited to about 3×10^?10cm²V^?1 at low T. The independent results account for the observed νμτ values and suggest that, contrary to the interpretation of Hoheisel, Carius and Fuhs (1984), the main contribution to the low-temperature photoconductivity arises from transport in tail states.