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Potential fluctuations in phase change memory materials |
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| Authors: | Ch. Bapanayya Rajeev Gupta |
| Affiliation: | 1. Materials Science Programme, Department of Physics , Indian Institute of Technology Kanpur , Kanpur, India;2. Materials Science Programme, Department of Physics , Indian Institute of Technology Kanpur , Kanpur, India;3. Department of Physics , Indian Institute of Technology Kanpur , Kanpur, India |
| Abstract: | Long-range potential fluctuations have been quantified in amorphous and crystallised thin films of a family of Ge–Sb–Te (GST) chalcogenide glasses. Among the compositions studied, the width of the potential fluctuations is the smallest for amorphous Ge2Sb2Te5. This is also the most robust material in terms of the number of write–erase cycles for GST films when used as phase change memory materials. A plausible explanation for this observation is given and a criterion for selecting suitable compositions in optical memory devices is proposed. |
| Keywords: | chalcogenide glasses crystallisation electronic transport phase changes |