Pressure dependence of the electrical resistivity of natural cassiterite SnO2 and of undoped and Co-doped nanocrystalline SnO2

The pressure dependence of the electrical resistivity of three different samples of cassiterite, namely natural cassiterite SnO₂, synthetic nanocrystalline SnO₂ (with crystallite size 46?nm) and nanocrystalline Co-doped SnO₂ (with crystallite size 32?nm), has been measured up to 7?GPa at room temperature. The resistivity of natural cassiterite SnO₂ decreases from 2.5?×?10⁴?Ωm at normal pressure and temperature to 1.7?×?10⁴?Ωm at 7.0?GPa. The nanocrystalline SnO₂ has a high resistivity 6.0?×?10⁵?Ωm at normal pressure and temperature and decreases with pressure reaching a value of 2.98?×?10⁵?Ωm at 7?GPa. The activation energy of the electrical conduction of the studied samples were found to be 0.32?eV for the natural SnO₂, 0.40?eV for the nanocrystalline SnO₂ sample and 0.28?eV for the nanocrystalline Co-doped SnO₂. Measurements of the pressure dependence of the electrical resistivity of the Co-doped SnO₂ showed a decrease from 3.60?×?10⁵ to 5.4?×?10⁴?Ωm at 7.0?GPa. We did not observe any pressure-induced phase transition in SnO₂ up to 7?GPa. This study of the high-pressure phase stability of cassiterite corroborates the experimental findings of SnO₂ nanoinclusions in diamonds.