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Epitaxy and interfacial energy of heterostructure interfaces
Authors:Hans J Fecht
Institution:W. M. Keck Laboratory of Engineering Materials, California Institute of Technology , Pasadena, California, 91125, USA
Abstract:Abstract

Geometric models relating the energy of composite interfaces to their atomic structure can be based on the concept of static distortion waves. This approach constitutes the physical basis for two-dimensional geometric models, including the ‘lock-in model’ previously proposed for metal/ceramic interfaces. Several examples are discussed, providing new insight into such phenomena as epitaxy of thin films.
Keywords:
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