Investigation of {111} stacking faults and nanotwins in epitaxial BaTiO3 thin films by high-resolution transmission electron microscopy |
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| Authors: | C.H. Lei C.L. Jia M. Siegert K. Urban |
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| Affiliation: | 1. Illinois Institute of Technology, Mechanical, Materials and Aerospace Engineering , 10 W. 32nd Street, Chicago , IL 60616 , USA bin.gan727@gmail.com;3. Illinois Institute of Technology, Mechanical, Materials and Aerospace Engineering , 10 W. 32nd Street, Chicago , IL 60616 , USA |
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| Abstract: | {111} stacking faults and nanotwins in epitaxial BaTiO3 thin films on MgO substrates have been investigated by high-resolution transmission electron microscopy. In many cases, the stacking faults and nanotwins were found to be accompanied by partial dislocations. These partial dislocations can be classified as two different types, analogous to the situation in the fcc structure. One is of the Shockley type with the Burgers vector (a/3)<112>. The other is of the Frank type with the Burgers vector (a/3)<111>. The movements of both types of partial can lead to the {111} stacking faults and the {111} twins observed in these films. |
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| Keywords: | indentation high-temperature deformation nickel alloys Portevin–Le Chatelier effect pre-deformation |
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