Interactions of in atoms with partial dislocations cores in GaAs: 0.3% In |
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| Authors: | N. Burle-Durbec B. Pichaud F. Minari |
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| Affiliation: | Laboratoire de Physique Cristalline, UA 797, Faculté des Sciences et Techniques St-Jér?me , case 151, 13397, Marseille Cedex, 13, France |
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| Abstract: | Abstract It has been established that dislocation mobilities in GaAs are reduced by In doping. This reduction operates mainly on defects exhibiting at least one α (As core) partial dislocation. We discuss here the different interactions between In and α partials which can occur. We propose interstitial In incorporated on dangling bonds as responsible for the observed reduction in mobility. The role of temperature and stress is also discussed. |
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