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Secondary defects induced by ion and electron irradiation of GaSb |
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| Authors: | Noriko Nitta Eiji Taguchi Hidehiro Yasuda Hidetaro Mori Yoshihiko Hayashi Toshimasa Yoshiie |
| Institution: | 1. Department of Mechanical Engineering , Kobe University , Rokkodai, Nada, Kobe 657-8501, Japan nitta@mech.kobe-u.ac.jp;3. Research Center for Ultra-High Voltage Electron Microscopy, Osaka University , Mihogaoka, Ibaraki, Osaka 565-0047, Japan;4. Research Reactor Institute, Kyoto University , Kumatori, Sennan, Osaka 590-0494, Japan |
| Abstract: | Secondary defects induced by ion and electron irradiation up to 6?dpa (displacements per atom) at liquid-nitrogen temperature in GaSb thin films are compared. For Sn ion (60?keV) irradiation, voids were observed. However, for high-energy electron (2?MeV) irradiation, interstitial-type dislocation loops were produced. The densities of voids and interstitial-type dislocation loops were almost equivalent (8?×?1014?voids/m2 and 3?×?1014?loops/m2) after irradiations at the same damage level of 6?dpa. It is concluded that the formation of voids by ion irradiation follows the creation of localised vacancy defects in cascade damage. |
| Keywords: | GaSb ion irradiation electron irradiation voids dislocation loop transmission electron microscopy |