Growth of carbon nanotubes: effect of Fe diffusion and oxidation

The diffusion and surface oxidation rates of Fe deposited on Si and barrier layers of Al/SiO₂ and Al₂O₃/SiO₂ have been comparatively studied and correlated with the growth of carbon nanotubes (CNTs). Initially, Fe/Si, Fe/Al/SiO₂/Si and Fe/Al₂O₃/SiO₂/Si samples were subjected to thermal chemical vapour deposition (CVD) at ～650°C for ～30?min to grow the CNTs. Scanning electron microscopy analysis showed that the height of the CNTs on the Fe/Al₂O₃/SiO₂/Si samples was relatively high (～9.5–11?µm), as compared with the other samples. To investigate this, a few as-prepared samples were thermally annealed at ～650°C for ～30?min and characterized by dynamic secondary ion mass spectroscopy (D-SIMS) and X-ray photoelectron spectroscopy (XPS). The D-SIMS results showed that the diffusion depth, x _Fe, and magnitude of the diffusivity, D _Fe, of the Fe atoms are highest for the Fe/Si sample. This is attributed to vacancy-mediated migration, which leads to the formation of unstable, non-stoichiometric Fe–Si and Fe–O–Si phases. However, for the Fe/Al₂O₃/SiO₂/Si samples, the magnitudes of x _Fe and D _Fe are found to be the lowest, which indicates steric hindrance to Fe by the Al₂O₃ layers. The XPS analysis revealed that the surface metallic state, after annealing, is almost unaffected for the Fe/Al₂O₃/SiO₂/Si samples, whereas the majority of the Fe precipitate was observed to be oxidized in the case of the other samples.