Effects of irradiation with electrons of different energies on the dark conductivity and the network of hydrogenated amorphous silicon films |
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| Authors: | N.M. Liao W. Li Z. Liu Y.D. Jiang N. Ma Y. Li |
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| Affiliation: | 1. State Key Laboratory of Electronic Thin Films and Integrated Devices , University of Electronic Science and Technology of China , Chengdu, China liaonaiman@sohu.com;3. State Key Laboratory of Electronic Thin Films and Integrated Devices , University of Electronic Science and Technology of China , Chengdu, China;4. School of Optoelectronic Information , University of Electronic Science and Technology of China , Chengdu, China |
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| Abstract: | The effects of irradiation with electrons having energies in the range 0.7–1.7 MeV on the dark conductivity and the network of hydrogenated amorphous silicon (a-Si:H) thin films have been studied. The dark conductivity measurements show that electron irradiation leads to a degradation in the dark conductivity, with the degradation being greater at lower electron energies. The Raman results suggest that the irradiation induces structural defects in the a-Si:H films, with the lower energy electrons producing more disorder in the amorphous network. |
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| Keywords: | electron irradiation hydrogenated amorphous silicon dark conductivity amorphous network |
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