A new approach to surface photovoltage measurements on hydrogenated microcrystalline silicon layers |
| |
| Authors: | Zsolt Gulácsi † |
| |
| Institution: | 1. CSO Valuations AG , 17 Charterhouse Street, London, EC IN 6RA, England;2. J. J. Thomson Physical Laboratory, University of Reading , Whiteknights, Reading, RG6 2AF, England;3. University of Antwerp , Groenenborgerlaan 171, B-2020, Antwerp, Belgium |
| |
| Abstract: | A new approach to the surface photovoltage method is demonstrated on thick undoped microcrystalline silicon films grown on different substrates. The model, which includes top as well as bottom space-charge regions, gives a good picture of rather complex experiments and allows good fitting of theoretical curves to experimental results. This method gives us not only the diffusion length of minority carriers but also information on the existence and properties of the space-charge regions in the sample and the results are verified by comparison with the standard procedure. |
| |
| Keywords: | |
|
|
