Transformation of Shockley into Frank stacking faults in a ZnS 0.04 Se 0.96 /GaAs (001) heterostructure

We report the transformation of Shockley partial dislocations (PDs) into Frank PDs in lattice-matched ZnS 0.04 Se 0.96 /GaAs(001) as investigated by transmission electron microscopy. The ZnS 0.04 Se 0.96 layers, with a nominal thickness of 70 nm, were grown on GaAs(001) by metal-organic chemical vapour deposition at 350°C. We mainly find stacking-fault pairs on the (111) and planes that are bound by Shockley PDs with Burgers vector . Different reactions are observed between PDs taking place in situ in the electron microscope, leading to the transformation of Shockley PDs into Frank PDs with and stacking faults on the or planes.