Relaxation of electrons following trapping in the space-charge-limited conduction regime of n + -i-n + hydrogenated amorphous silicon structures

The relaxation of a space charge due to trapped electrons in an n + -i-n + hydrogenated amorphous silicon structure has been modelled by Solomon. Here we extend the model by obtaining analytical expressions for the current at the beginning of the relaxation as well as for long times when retrapping of electrons is taken into account. Our expression for the current at long times differs considerably from that given previously. Consequences for the derived values of the capture cross-sections of the gap states near the Fermi level are examined and discussed.