PbO compensation in the growth of PbWO4: Y3+ crystals |
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| Authors: | X. Zhang J. Liao Z. Yin X. Wu |
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| Affiliation: | 1. Department of Material Sciences , Fudan University , Shanghai 200433, China;2. Shanghai Institute of Ceramics , Chinese Academy of Sciences , Shanghai 200050, China |
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| Abstract: | The light yield of Y3+-doped PbWO4 crystals increases after low-dose-rate irradiation with?γ?rays, and the radiation hardness is sensitive to annealing temperature. In the PWO growth procedure, an excess of PbO in the starting materials is a convenient method of compensating for PbO volatility. The relationship between the excess of PbO and the abnormal radiation behaviour has been investigated. The mechanism of the normal excess of PbO in the growth of PWO: Y3+ is discussed. |
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