Span of attention,backward masking,and reaction time |
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Authors: | Tadasu Oyama Tadashi Kikuchi Shigeru Ichihara |
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Affiliation: | 1. Department of Psychology, Faculty of Letters, University of Tokyo, 113, Hongo, Bunkyo-ku, Tokyo, Japan 2. Industrial Products Research Institute, Ibaraki, Japan 3. Tokyo Metropolitan University, Tokyo, Japan
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Abstract: | A test pattern consisting of 0 to 15 dots and a following random dot masking pattern were presented for 5 msec each with SOAs varying between 30 and 200 msec. The subject was asked to report the perceived number of dots in the test pattern as soon as possible and to assign a confidence rating to each report. The span of attention (upper limit for 50% correct numerosity judgments) increased from 2.4 to 9.5 as the SOA increased. Backward masking reduced the reported number of dots from the actual number in the test pattern, especially with small SOAs. Reaction time increased linearly at a low rate (approximately 40 msec/dot) up to 4 dots in the test pattern and then increased linearly at a high rate (approximately 370 msec/dot) as thereported, orperceived, number of dots increased. The two different branches of the reaction time curve were considered to represent two separate processes,subitizing andcounting, as suggested by Klahr (1973), who found similar dual increase rates as a function of the actual number of dots. These findings, as well as causal inference based on partial correlations and path analysis, indicated that the reported (perceived) number of dots and confidence rating were both determined by the number of stimulus dots and the SOA and that the reaction time was determined by the so-determined perceived number of dots and level of confidence. A multistage model is proposed. |
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