Accumulation of geometrically necessary dislocations near grain boundaries in deformed copper |
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Authors: | Jun Jiang T Ben Britton |
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Institution: | Department of Materials , University of Oxford , Parks Road, Oxford , UK |
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Abstract: | Cross-correlation-based analysis of electron backscatter diffraction patterns has been used to map the distribution of geometrically necessary dislocation (GND) density in deformed polycrystalline copper. Patterning of the dislocations into high-density cell walls and low-density cell interiors was readily observed at the micron scale. Patterning at the longer length scale of the grain size was also evident with high-density regions (GND hot spots) tending to be in clusters, often found close to some but not all grain boundaries and triple junctions. |
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Keywords: | EBSD GNDs dislocations deformation |
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