Structural changes induced by low-energy electron irradiation in GaSb |
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| Authors: | Noriko Nitta Yohta Aizawa Tokiya Hasegawa Hidehiro Yasuda |
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| Affiliation: | 1. Department of Mechanical Engineering , Kobe University, Rokkodai , Nada, Kobe 657-8501, Japan;2. Institute for Nanotechnology, Kochi University of Technology , Kochi 782-8502, Japan nitta.noriko@kochi-tech.ac.jp;4. Department of Mechanical Engineering , Kobe University, Rokkodai , Nada, Kobe 657-8501, Japan;5. Toppan Printing Co., Ltd. , Tokyo, Japan;6. Research Center for Ultra-High Voltage Electron Microscopy, Osaka University , Osaka, Japan |
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| Abstract: | Structural changes in GaSb (001) thin films upon low-energy electron (125?keV) irradiation have been studied by in situ transmission electron microscopy. No structural changes were observed for irradiation at room temperature. However, in a sample irradiated at 473?K domains of {110} variant, rotated 90° from each other, were formed in the matrix. The average diameter of the domains was approximately 18?nm in the sample irradiated to a fluence of 4.8?×?1024?electrons/m2. It is considered that the domains are pseudo-{110} planes in the matrix formed by electron-irradiation-induced Shockley partial dislocations. |
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| Keywords: | GaSb electron irradiation transmission electron microscopy variant formation |
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