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Individual differences in working memory capacity and learning: Evidence from the serial reaction time task
Authors:Nash?Unsworth  author-information"  >  author-information__contact u-icon-before"  >  mailto:gtgd@prism.gatech.edu"   title="  gtgd@prism.gatech.edu"   itemprop="  email"   data-track="  click"   data-track-action="  Email author"   data-track-label="  "  >Email author,Randall?W.?Engle  author-information"  >  author-information__contact u-icon-before"  >  mailto:randall.engle@psych.gatech.edu"   title="  randall.engle@psych.gatech.edu"   itemprop="  email"   data-track="  click"   data-track-action="  Email author"   data-track-label="  "  >Email author
Affiliation:School of Psychology, 654 Cherry St., Georgia Institute of Technology, Atlanta, GA 30332-0170, USA. gtg039d@prism.gatech.edu
Abstract:High and low working memory (WM) capacity individuals performed the serial reaction time task under both incidental and intentional learning conditions to determine the role of WM capacity in the learning of sequential information. WM capacity differences emerged in conditions of intentional but not incidental learning, indicating that individual differences in WM capacity occur in tasks requiring some form of control, with little difference appearing on tasks that required relatively automatic processing. Furthermore, an index of learning was significantly related to a measure of general fluid intelligence under intentional conditions only. Thus, the degree of learning was significantly related to higher order cognition, but only when intentional processing was emphasized.
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