Dislocation relaxation and alloy softening of bcc alloys

Recently, low-frequency internal friction measurements on a series of Fe–Cr alloys by Konstantinovi? and Terentyev [M.J. Konstantinovi? and D. Terentyev, Mater. Sci. Eng. A 521–522 (2009) p.106] have demonstrated that increasing Cr concentrations lead to an increase in the strength of the β-relaxation at the cost of the γ-relaxation (Chambers’ notation). In the same concentration and temperature regime, the alloys show alloy softening. It is argued that both phenomena are due to the same process, namely the influence of foreign atoms on the transformation of the cores of a ₀?1 1 1?/2 screw dislocations from their low-temperature configuration, capable of forming kink pairs on {1 1 0} planes, to their high-temperature configuration with kink-pair generation on {2 1 1} planes.     

High-temperature creep associated with the climb of extended dislocations subjected to chemical stresses

The effect of chemical stresses upon the relation between extended dislocations and high-temperature creep in a thin plate has been investigated. The critical stress needed for the contraction of extended jogs and its effect on the creep rate are obtained. The results indicate that the critical stress needed for the contraction increases with decreasing stacking fault energy (SFE). However, creep occurs more easily with increasing SFE and increasing angle of the Burgers vector to the dislocation line, as well as with the concentration of any diffusing atoms.     

Secondary defects induced by ion and electron irradiation of GaSb

Secondary defects induced by ion and electron irradiation up to 6?dpa (displacements per atom) at liquid-nitrogen temperature in GaSb thin films are compared. For Sn ion (60?keV) irradiation, voids were observed. However, for high-energy electron (2?MeV) irradiation, interstitial-type dislocation loops were produced. The densities of voids and interstitial-type dislocation loops were almost equivalent (8?×?10¹⁴?voids/m² and 3?×?10¹⁴?loops/m²) after irradiations at the same damage level of 6?dpa. It is concluded that the formation of voids by ion irradiation follows the creation of localised vacancy defects in cascade damage.     

Electron irradiation damage in SnO

In a study of radiation effects in SnO we have found that electron-beam damage is observable from changes in a high-resolution electron microscopy image or electron diffraction pattern. The early stage of the damage is not accompanied by a change in composition or a loss of crystallinity. The dose required for this damage (about 600 C cm^?2) is approximately independent of electron energy (between 100 and 400 keV) and specimen temperature (between 100 and 300 K). The damage is believed to start with displacement of oxygen atoms from their lattice position through a radiolytic mechanism with an efficiency of approximately 10^?4.     

Experimental observation of the dislocation walls in heterostructures with two interfaces: Ge/Ge0.5Si0.5 10 nm/Si(001) as an example

High-resolution electron microscopy (HREM) at the atomic scale has been applied to study the edge dislocation redistribution between interfaces in Ge/Ge_0.5Si_0.5/Si(0?0?1) heterostructures. Our results provide a direct explanation that plastic relaxation of the GeSi buffer layer proceeds owing to motion of Lomer-type dislocation complexes consisting of a pair of complementary 60° dislocations with the ends of the {1?1?1} extra planes being located at a distance of ~2–12 interplanar spacings from each other. It is demonstrated that edge dislocations belonging to the upper and lower interfaces become arranged one under the other and dislocation walls are formed. The distributions of tension and compression in the [0?0?1] direction between two edge dislocations, obtained by processing the HREM image, testify to superposition of strain fields.     

Site preference and alloying effect of Re atoms in the edge dislocation cores in Ni3Al

Using Cambridge sequential total energy package method based on the density functional theory, we investigated the site preference and alloying effect of Re atoms in the [1 0 0] (0 1 0) edge dislocation cores in Ni₃Al. Due to the introduction of a Re atom, the energetic and electronic structure of dislocation core systems have been changed a lot. The binding energy results suggest Re atom prefers Al site, especially the centre site in the centre-Al system, which can be explained by the results of Mulliken orbital population and density of states. When Re atom occupies the centre site in the centre-Al system, the DC system has the highest stability and stronger bonds formed between the Re atom and its nearest neighbouring atom due to hybridization of the Re-5d and Ni-3d orbitals.     

Temperature dependence of the stacking fault energy of glide set-dissociated dislocations in Si

Recently, it was found that the dissociation distance of glide set dislocations introduced in Si just below the melting temperature by laser shock peening (LSP) is unusually wide (Iwata et al. J. Jpn Inst. Met. Materi.,79(2015),308–314). In order to distinguish whether or not this is to be attributed to uncorrelated motions of leading and trailing Shockley partials or the intrinsic temperature dependence of the stacking fault energy (SFE), dislocations introduced by LSP were annealed at 1350 °C, which should be high enough for the uncorrelated partials to assume the equilibrium correlated configuration. It was found that this unusual widening of a dissociated dislocation introduced by LSP is attributed to uncorrelated motions of Shockley partials. Following this conclusion, the temperature dependence of the intrinsic SFE of Si was determined on correlated dissociated dislocations up to near the melting temperature. The intrinsic SFE of Si shows only negligibly small temperature dependence from 400 °C up to near the melting temperature.     

In-situ X-ray diffraction during tensile deformation of ultrafine-grained copper using synchrotron radiation

At the synchrotron facility, Super Photon Ring – 8 GeV, in-situ X-ray diffraction during tensile deformation was conducted on ultrafine-grained Cu with a grain size of about 300 nm fabricated by equal-channel angular pressing. The diffraction profile was observed with the time resolution of about 1 s using multiple MYTHEN detectors, and the diffraction angle and the full-width at half-maximum of some Bragg peaks were determined using the pseudo-Voigt function. From the analysis of Bragg peaks, it was found out that there are microscopically three regions; elastic, plastic and transition regions. The 0.2% proof stress obtained from the stress–strain curve locates within the microscopic transition region. Microstrain was evaluated using the Williamson–Hall method and the dislocation density was also obtained from the microstrain. The dislocation density starts increasing before 0.2% proof stress, which is associated with dislocation bow-out and emission from grain boundaries. The Taylor relationship seems to be still satisfied after 0.2% proof stress.     

Abnormally high residual dislocation density in pure aluminum after Al/Ti/Al laminate annealing for seven days

We report an abnormally high residual dislocation density in aluminium in an Al/Ti/Al laminate annealed at 873 K for seven days. The residual dislocation density reaches 7.5 × 10¹⁴ m^?2, higher than that in aluminum after severe plastic deformation processes such as accumulative roll bonding and high-pressure torsion. It is proposed that the high residual dislocation density may result from obstruction of the movement of TiAl₃ nanoparticles by the grain boundary and Ti atoms conglomerating at vacancies distributed in the aluminium matrix at a high temperature for a sufficient time to allow a relatively stable crystal.