Secondary defects induced by ion and electron irradiation of GaSb

Secondary defects induced by ion and electron irradiation up to 6?dpa (displacements per atom) at liquid-nitrogen temperature in GaSb thin films are compared. For Sn ion (60?keV) irradiation, voids were observed. However, for high-energy electron (2?MeV) irradiation, interstitial-type dislocation loops were produced. The densities of voids and interstitial-type dislocation loops were almost equivalent (8?×?10¹⁴?voids/m² and 3?×?10¹⁴?loops/m²) after irradiations at the same damage level of 6?dpa. It is concluded that the formation of voids by ion irradiation follows the creation of localised vacancy defects in cascade damage.     

Structural changes induced by low-energy electron irradiation in GaSb

Structural changes in GaSb (001) thin films upon low-energy electron (125?keV) irradiation have been studied by in situ transmission electron microscopy. No structural changes were observed for irradiation at room temperature. However, in a sample irradiated at 473?K domains of {110} variant, rotated 90° from each other, were formed in the matrix. The average diameter of the domains was approximately 18?nm in the sample irradiated to a fluence of 4.8?×?10²⁴?electrons/m². It is considered that the domains are pseudo-{110} planes in the matrix formed by electron-irradiation-induced Shockley partial dislocations.