Amorphization under fracture surface in hydrogen-charged and low- temperature tensile-tested austenitic stainless steel

ABSTRACT

The microstructure just below the fracture surface in hydrogen-charged stable austenitic SUS 316L stainless steel, which was subjected to a low strain rate tensile test at ?70°C, was studied by a combination of the focused-ion-beam method and transmission electron microscopy. An amorphous region with a chemical composition almost identical to that of the polycrystalline region was found under the lath-like structure on the fracture surface, although no deterioration of tensile properties by hydrogen appeared. In the amorphous region, band-like regions with wavy contrasts were observed, which were often accompanied by cracks at the boundaries. The presence of the amorphous region with band-like regions implies that amorphization occurred due to high-density vacancies accompanied by agglomerations of excess vacancies in the hydrogen-charged SUS 316L stainless steel that was tensile-tested at low temperatures.     

Role of cross-slipping in formation of edge dislocations in heteroepitaxial systems GeSi-on-Si(001) and Ge-on-InGaAs/GaAs

Edge misfit dislocations (MDs) formed as result of reactions between 60° glissile threading dislocations and 60° MDs lying on an intersecting glide plane were found in strained GeSi-on-Si(001) and Ge-on-InGaAs/GaAs films. It was demonstrated that dislocations penetrating from the InGaAs buffer layer to the strained Ge film can provoke formation of not only 60° MDs, but also edge MDs on the interface even at minor mismatch of the lattice parameters of the film and the InGaAs/GaAs virtual substrate.     

High temperature mechanics of nanomoulded amorphous metals

High temperature mechanics of nanomoulded amorphous metals was investigated by in situ nanomechanical testing. Nanopillars of Pd₄₃Cu₂₇Ni₁₀P₂₀ metallic glass were synthesized by thermoplastic forming and their stress–strain response was obtained concurrent with direct observation of their deformation behaviour. This allowed the measurement of mechanical behaviour from nanopillars and the corresponding bulk substrate with identical thermal history. A rise in elastic modulus was seen with increase in temperature for both the nanopillars and substrate, which was explained by diffusive rearrangement of atomic-scale viscoelastic units. The results provide fundamental insights into structural rearrangement in metallic glasses.     

Shuffle-set dislocation nucleation in semiconductor silicon device

We have found that a shuffle-set dislocation is nucleated in a semiconductor silicon device subjected to severe thermal processing. The dislocation transforms into a dissociated glide-set dislocation after annealing at 500°C. A possible mechanism for the nucleation of a perfect shuffle-set dislocation during thermal processing is that the dislocation nucleus was nucleated at a low temperature during prior ion-implantation processing.     

Effects of irradiation with electrons of different energies on the dark conductivity and the network of hydrogenated amorphous silicon films

The effects of irradiation with electrons having energies in the range 0.7–1.7 MeV on the dark conductivity and the network of hydrogenated amorphous silicon (a-Si:H) thin films have been studied. The dark conductivity measurements show that electron irradiation leads to a degradation in the dark conductivity, with the degradation being greater at lower electron energies. The Raman results suggest that the irradiation induces structural defects in the a-Si:H films, with the lower energy electrons producing more disorder in the amorphous network.     

Observation of phase separation in magnetron sputter-deposited Al–Cu thin films

The microstructures of Al–1.8 to 92.5?at.% Cu thin films prepared by radiofrequency (13.56?MHz) cathodic magnetron sputtering have been investigated by X-ray diffraction (XRD) and transmission electronic microscopy (TEM). A phase separation occurs in films of nominal Al–66.64?at.% Cu composition, consisting of a fcc Al solid solution phase, a fcc Cu solid solution phase and an unexpected sc Cu₃Al ordered phase with a Cu₃Au structure and a lattice parameter of about 0.36?nm.     

Octapod-shaped,nanosized, amorphous precipitates in a crystalline ferrite matrix

The development of uniquely octapod-shaped nanosized amorphous silicon–nitride precipitates in a ferrite matrix was observed upon nitriding of Fe–4.5at.%Si alloy. The legs of the amorphous precipitate are oriented along ?1?1?1?-directions of the ferrite. The occurrence of such peculiarly shaped amorphous silicon–nitride precipitates, which experience a volume misfit of more than 100% with the surrounding ferrite, was attributed to precipitate growth influenced by long-range diffusion within the evolving highly anisotropic stress field around the developing precipitates after nucleation.     

Effect of Al-Zr clusters on the thermal stability of Cu-Zr-rich Cu-Zr-Al bulk metallic glasses

The Gibbs free energy of formation, ?G^a, of the amorphous phase of Cu–Zr-rich Cu–Zr–Al bulk metallic glasses (BMGs) has been calculated over a broad composition region to re-evaluate their thermal stability, based on the efficient cluster packing model. It is found that Al–Zr clusters have an important effect on the thermal stability of the Cu–Zr–Al BMGs with the same Cu/Zr content ratio. The crystallisation of the BMGs involves crystallisation of both Al–Zr and Cu–Zr clusters. The results could be useful for predicting the thermal stability and understanding the underlying mechanism of crystallisation of multicomponent metallic glasses.     

Long-term metastability of light-induced defects in hydrogenated amorphous silicon

The decay of the peak intensity of the electron spin resonance signal associated with light-induced dangling bonds in a-Si(H) has been measured at room temperature as a function of time during very long intervals such as 3400 days after the intense pulsed illumination was turned off. The decay curve is fitted by an exponential function with a decay constant of 393 days and reaches a steady-state value smaller than the value taken before illumination. Such a long-term metastability of light-induced dangling bonds in a-Si:H is discussed in terms of reconstruction of the amorphous network occurring through hydrogen motion.