Temperature dependence of the stacking fault energy of glide set-dissociated dislocations in Si

Recently, it was found that the dissociation distance of glide set dislocations introduced in Si just below the melting temperature by laser shock peening (LSP) is unusually wide (Iwata et al. J. Jpn Inst. Met. Materi.,79(2015),308–314). In order to distinguish whether or not this is to be attributed to uncorrelated motions of leading and trailing Shockley partials or the intrinsic temperature dependence of the stacking fault energy (SFE), dislocations introduced by LSP were annealed at 1350 °C, which should be high enough for the uncorrelated partials to assume the equilibrium correlated configuration. It was found that this unusual widening of a dissociated dislocation introduced by LSP is attributed to uncorrelated motions of Shockley partials. Following this conclusion, the temperature dependence of the intrinsic SFE of Si was determined on correlated dissociated dislocations up to near the melting temperature. The intrinsic SFE of Si shows only negligibly small temperature dependence from 400 °C up to near the melting temperature.