Screw misfit dislocations perpendicular to one or two free surfaces

ABSTRACT

When a screw dislocation pierces one or two free surface(s), noticeable elastic relaxation takes place nearby these surfaces. To refine the theoretical interpretation of an electron microscopy image this relaxation should be included in a precise imaging model. In the present work, the relaxation field is evaluated for a periodic set of misfit screw dislocations normal to the free surface of a semi-infinite or plate-like heterogeneous bicrystal. The proposed approach uses an appropriate combination of known biperiodic elastic fields. For a homogeneous medium and when the period increases, the results around a misfit screw dislocation converge to those of Eshelby and Stroh (1951) who considered an isolated translation screw dislocation.     

Irradiation-enhanced twin boundary migration in BCC Fe

The effects of irradiation on twin boundary migration in BCC Fe are studied by atomistic simulations. It is found that under the applied shear strain–stress, thermal spikes may create twinning dislocation loops (TDLs) at twin boundaries, so triggering twinning. Irradiation-generated clusters of point defect at twin boundaries may act as sources to nucleate TDLs. When a vacancy loop intersects with a twin boundary, the critical stress to activate a TDL is less than half of that required for a defect-free twin boundary.     

Microstructure evolution of cold-worked Zircaloy-4 under 20 mev Cu ion irradiation

Abstract

Based upon our previously developed microscopic model of intergranular embrittlement in A₃B L1₂ intermetallic compounds, it is shown that a plot of A versus B s-orbital electronegativity leads to a clear discrimination between ductile and brittle materials. A structure-property relationship is uncovered by constructing the associated structure map using phenomenological Mendeleev numbers, which exhibits a topology identical to the ductile-brittle property map.     

Shuffle-set dislocation nucleation in semiconductor silicon device

We have found that a shuffle-set dislocation is nucleated in a semiconductor silicon device subjected to severe thermal processing. The dislocation transforms into a dissociated glide-set dislocation after annealing at 500°C. A possible mechanism for the nucleation of a perfect shuffle-set dislocation during thermal processing is that the dislocation nucleus was nucleated at a low temperature during prior ion-implantation processing.     

A new orthorhombic approximant of the icosahedral Al–Cu–Fe quasicrystal

We report on the formation of a new crystalline approximant phase of the icosahedral (i-)Al–Cu–Fe quasicrystal. This phase is formed during sintering of Al-based composites reinforced with i-AlCuFeB quasicrystalline particles. The structure of this phase has been characterized by transmission electron microscopy (TEM) and high-resolution electron microscopy (HREM). TEM revealed that it is a B-centred orthorhombic phase with lattice parameters a = 1.166 nm, b = 1.195 nm and c = 3.44 nm. Its chemical composition, as determined by electron energy loss spectroscopy (EELS), is close to Al_76.9Cu_2.7Fe_20.4, with an average number of valence electrons per atom e/a of 1.92, similar to the value in all other approximants of the i-phase discovered thus far. Initial results on local atomic arrangements along one of its pseudo-5-fold axes are also presented.     

Initial sintering of cylindrical particles of different sizes by surface diffusion

Sintering of two cylindrical particles of different sizes by surface diffusion at the early stage is theoretically analysed. Formulae for the neck growth rate are derived using a variational principle and the continuity equation of vacancies. The size difference between two particles is found to influence the growth rate of the neck only when the difference is large.     

Creep behaviour of ice single crystals loaded in torsion explained by dislocation cross-slip

Torsion creep experiments are carried out in order to understand the physics of ice plasticity. A dislocation spreading mechanism based on double cross-slip of basal dislocations is proposed to explain the strong plastic anisotropy and the power law relationship between stress and strain rates. The scenario is tested using three-dimensional dislocation dynamics simulations. Numerical investigations give a stress exponent n?=?2.3 in agreement with experimental measurements. This dislocation spreading mechanism sheds a new light on the interpretation of former experimental observations.     

Connection between deformation-induced dislocation substructures and martensite formation in stainless steel

We report a quantitative connection between the strain amplitude dependencies of the organisation of dislocation cell substructures with the formation of deformation-induced martensite during cyclic plasticity of austenitic stainless steel at ambient temperature.     

Anisotropic thermal properties of single-wall-carbon- nanotube-reinforced nanoceramics

Dense single-wall-carbon-nanotube-(SWCNT)-reinforced alumina nanocomposites have been fabricated by a novel spark-plasma-sintering technique. Anisotropic thermal properties have been found in carbon nanotube composites. The introduction of ropes of SWCNTs gives rise to a decrease in the transverse thermal diffusivity with increasing carbon nanotube content while it does not change the in-plane thermal diffusivity. This is scientifically interesting and technologically important for the development of materials for novel thermal barrier coatings.     

TEM in situ straining experiments in Fe at low temperature

In situ transmission electron microscopy straining experiments were carried out in pure Fe to investigate the origin of the discontinuity observed at 250 K in the temperature variation of the deformation activation parameters. The results show that the motion of screw dislocations is steady at 300 K, in agreement with a kink-pair mechanism, but jerky at 110 K. This change has been attributed to a transition from a kink-pair mechanism to a locking–unlocking mechanism, similar to that observed previously in Ti.