“You’re on ten,where can you go from there?” Tufnel problems in repeated experiential judgments

We describe a set of Tufnel problems that arise when repeated use of a fixed-point scale precipitates failures to assess a full range of subjective experiences. As empirical evidence, participants in Study 1 periodically reported their depth of mind wandering on either 5- or 7-point Likert scales during a sustained attention task. The proportion of participants providing maximum scale ratings increased quickly over time-on-task and did so more quickly for the 5-point than for the 7-point group. Participants in Study 2 completed the same task using a 10-point scale before indicating whether and where they could have used a scale extended to “11” during the task. Slightly more than 20% of participants reported needing a scale extension. This Need for 11 was associated with differences in both reports of mind wandering depth and task performance. We conclude that Tufnel problems warrant methodological consideration and reflect interesting constraints on human judgment.     

Experimental observation of the dislocation walls in heterostructures with two interfaces: Ge/Ge0.5Si0.5 10 nm/Si(001) as an example

High-resolution electron microscopy (HREM) at the atomic scale has been applied to study the edge dislocation redistribution between interfaces in Ge/Ge_0.5Si_0.5/Si(0?0?1) heterostructures. Our results provide a direct explanation that plastic relaxation of the GeSi buffer layer proceeds owing to motion of Lomer-type dislocation complexes consisting of a pair of complementary 60° dislocations with the ends of the {1?1?1} extra planes being located at a distance of ~2–12 interplanar spacings from each other. It is demonstrated that edge dislocations belonging to the upper and lower interfaces become arranged one under the other and dislocation walls are formed. The distributions of tension and compression in the [0?0?1] direction between two edge dislocations, obtained by processing the HREM image, testify to superposition of strain fields.