Production of recrystallized nano-grains in a fine-grained Cu–Zn alloy

A fine-grained Cu–30%Zn alloy sheet was rolled at 77 K to induce ultrafine mechanical twins. Subsequent annealing of the rolled alloy at temperatures up to 543 K led to the uniform appearance of recrystallized ultrafine grains (UFGs), which contained numerous annealing twins. Average grain sizes of 150 ～ 300 nm were produced in this way. The formation of such UFGs during annealing is attributed to the high nucleus density associated with the fine initial grain size as well as to the high densities of mechanical twins and dislocations produced by cryorolling. The high driving force for recrystallization enabled the use of relatively low annealing temperatures, which limited the subsequent grain growth.     

Valence band structure of the NiAl–Mo alloy from the photoelectron spectrum

The valence band structures of the NiAl–Mo alloy was investigated by photoelectron spectroscopy. The valence band spectra of the NiAl–Mo alloy was shifted away from the Fermi level so that the Ni-d-band centroid moved to a higher energy by 0.22 eV as Mo was added. A possible explanation lied in the overlap of Ni-d bands in the energy with Mo-d and Al-p bands. The participation of Mo-d bands was correlated with the site preference of Mo in NiAl alloys.     

Energetic effects of dopants on the eutectoid decomposition of Nb–Si in situ composites

The influences of doping elements (Ti, Zr, Hf, V, Ta, Cr, Mo, W and Al) on the heats of formation of Nb, Nb₅Si₃ and Nb₃Si have been studied using first-principles pseudopotential plane-wave method based on density functional theory. Site preferences of dopants in Nb₅Si₃ and Nb₃Si intermetallics are first determined by comparing the heats of formation of the systems with different site occupations of the doping atoms. The partitionings of dopants between the equilibrium phases Nb and Nb₅Si₃ of Nb–Si in situ composites are then discussed and compared with experimental results. Phase partitioning behaviours of the alloying elements are found to depend strongly on the number of their valence electrons. By calculating the enthalpy of reaction regarding the eutectoid decomposition of Nb₃Si phase, we conclude that Ta is a Nb₃Si stabiliser while other dopants destabilise Nb₃Si at the investigated concentration.