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991.

We report the discovery of a new ferromagnetic phase in the one-dimensional Kondo lattice model for intermediate values of the coupling constant. This new ferromagnetic phase was observed using a non-Abelian density-matrix renormalization group algorithm, which allowed us to measure directly the magnetization of the ground state with high accuracy.  相似文献   
992.

The nature of impurity-dislocation interactions is one of the key questions governing the strength and plasticity of solid-solution materials. To investigate the influence of impurities on the mechanical properties of intermetallic NiAl, the electronic structure and energy of NiAl with a <100>{010} edge dislocation and transition-metal impurities was calculated using the real-space tight-binding linear muffin-tin orbital method. The localized electronic states, appearing in the core of the dislocation, are found to lead to strong impurity-dislocation interactions via two mechanisms: firstly, chemical locking, due to strong hybridization between impurity electronic states and dislocation localized states; secondly, electrostatic locking, due to long-range charge oscillations caused by the electron localization in the dislocation core. The results obtained explain qualitatively why the solid-solution hardening effect in NiAl correlates with the electronic structure of impurities rather than with size misfit, as expected according to traditional views.  相似文献   
993.

In this letter we employ high-precision Monte Carlo simulations to investigate tracer diffusion kinetics for diffusion via divacancies in the bcc lattice. We utilize the mechanisms originally identified by Mehrer in which the divacancy can move by nearest-neighbour jumps with stable first-nearest-neighbour, second-nearest-neighbour and fourth-nearest-neighbour configurations of the divacancy. The tracer correlation factor and the 'impurity-form' correlation factor were found to be some 4-6% lower than those found by the matrix method. The tracer diffusion data and isotope effect for sodium were revisited in terms of monovacancy and divacancy contributions. The main change is a revision upwards from 0.55 to 0.61 of the j K kinetic factor for divacancies.  相似文献   
994.
Single-crystal (0 0 0 1) GaN samples have been deformed with a Vickers indenter at room temperature using loads in the range from 0.02 to 4.90 N. Dislocations and cracks at the indentations were examined by means of scanning electron microscopy, cathodoluminescence, light microscopy and transmission electron microscopy. Geometrical relations could be found between the dislocation arrangement, cracks and the orientation of the indenter. The orientation of the indenter has only a slight effect on the dislocation pattern, but the crack system is predominantly determined by the symmetry and the orientation of the indenter.  相似文献   
995.

The Vickers hardnesses of 15 semiconductors, namely Si, Ge, SiC, AlN, GaN, GaP, GaAs, GaSb, InP, InAs, InSb, ZnO, ZnSe, ZnTe and CdTe, have been investigated from room temperature to their melting points. The temperature dependences of the Vickers hardness H V of 11 of these semiconductors, namely those with a cubic structure, obey a universal relationship when H V and the temperature T are scaled respectively by the shear modulus G and by Gb 3 / k B, with b being the magnitude of the Burgers vector. The scaling rule is the same as that found for the temperature dependence of the critical shear stress c for the {111}<110> slip system, satisfying the relationship H V = (70-100) c .  相似文献   
996.

The position of Dy in the unit cell of Bi2Sr2CaCu2Oy has been determined by a real-space method. This is compared with the reciprocal-space atom location by channelling-enhanced microanalysis (ALCHEMI) method.  相似文献   
997.

The notion of nanodefects (topological defects of nanoscale translational order) in nanostructures of various types is introduced. Experimental data reported in the literature are discussed giving direct evidence for the existence of nanodefects in self-assembled periodically ordered nanostructures such as arrays of quantum dots, self-assembled superlattice films of nanoparticles, and arrays of carbon nanotubes. Also, the specific geometric features of perfect and partial cellular dislocations (being a kind of nanodefect) and their role in superplastic deformation in nanocrystalline materials are considered.  相似文献   
998.
We report two studies examining the moderating effects of mentor status and protégé gender, along with the moderating role of occupational context, in the relationship of mentoring with protégé career outcomes. Our research replicates and extends previous findings, especially those by Ramaswami et al. (2010b). Results from Study 1 indicated that business school alumni with senior-male mentors earned more compensation than those with no mentors. Additionally, a 3-way interaction (protégé gender × senior-male mentor × occupation type) indicated that the senior-male mentor effect for compensation was especially prominent for females in male-gendered occupation types. Study 2, conducted in an aerospace manufacturing firm comprising both a male-gendered occupation and industry context, confirmed mentor-status by protégé gender interaction for compensation. Female protégés with senior mentors received more compensation than females with no mentors, and also more compensation than males with senior mentors. In contrast, protégés with “other” (not senior) mentors received less compensation than those with no mentors, with this negative effect being especially strong for females. Taken as a whole, these results confirm the importance of mentor status for protégé career success. The results also underscore the importance of considering both mentor attributes and work context in understanding male and female protégés' career returns from mentoring.  相似文献   
999.
1000.
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