Temperature dependence of the stacking fault energy of glide set-dissociated dislocations in Si

Recently, it was found that the dissociation distance of glide set dislocations introduced in Si just below the melting temperature by laser shock peening (LSP) is unusually wide (Iwata et al. J. Jpn Inst. Met. Materi.,79(2015),308–314). In order to distinguish whether or not this is to be attributed to uncorrelated motions of leading and trailing Shockley partials or the intrinsic temperature dependence of the stacking fault energy (SFE), dislocations introduced by LSP were annealed at 1350 °C, which should be high enough for the uncorrelated partials to assume the equilibrium correlated configuration. It was found that this unusual widening of a dissociated dislocation introduced by LSP is attributed to uncorrelated motions of Shockley partials. Following this conclusion, the temperature dependence of the intrinsic SFE of Si was determined on correlated dissociated dislocations up to near the melting temperature. The intrinsic SFE of Si shows only negligibly small temperature dependence from 400 °C up to near the melting temperature.     

Structural duality of 1/3⟨111⟩ twin-boundary disconnections

We investigate the structure of 1/3?111? disconnections at Σ3 {111} twin boundaries in gold. Our high-resolution transmission electron microscopy (HREM) observations and atomistic simulations show that the core relaxation of this defect is dramatically affected by reversing the sign of the Burgers vector, as oriented with respect to the twin boundary. In particular, we find two distinct, relaxed structures: one with a localized core and the other with a dissociated core composed of a stacking fault terminated by a Shockley partial dislocation. An analysis of the specific pathways available for the defect to relax and of the elastic interactions of the components of the dissociated dislocation for these cases explains the structural difference.     

Deformation mechanism of long-period TiAl 2

The microstructure of long-period TiAl 2 deformed at room temperature has been studied by means of transmission electron microscopy. Dislocations, stacking faults and twins were found to contribute to the deformation. A screw superdislocation with Burgers vector d 110] dissociates into two ½ d 110] super-partial dislocations associated with an antiphase boundary. The ½; d 110] super-partial dislocation further dissociates into two Shockley partial dislocations associated with a portion of complex intrinsic stacking fault on the closest-packed {111} plane. The propagation of stacking faults on successive {111} planes yields an order twin.     

Resolving individual Shockley partials of a dissociated dislocation by STEM

A practical method was developed to image detailed features of defects in a crystal using STEM. This method is essentially a STEM version of the conventional CTEM g/3g weak beam dark field (WBDF) method. The method was successfully applied to resolving individual Shockley partials of a dissociated dislocation in a Cu-6.44at.%Al alloy.     

Microstructure of hot-pressed α-Sic after creep experiments at high temperature

Abstract

Transmission electron microscopy analyses of hot-pressed α-Sic deformed at 1600°C have shown the activation of the basal plane with glide dislocations dissociated into Shockley partials. Loop nucleations have been frequently observed along the dislocation lines and a climb mechanism is proposed to explain, the experimental analyses.     

On the interactions between dislocations and a near-Σ=3 grain boundary in a low stacking-fault energy metal

The interactions of dissociated lattice dislocations with a near-Σ = 3 grain boundary (GB) in copper have been investigated by transmission electron microscopy using the weak-beam technique combined with bright-field image matching. From our observations, Shockley partials are required to recombine when entering the GB to form an absorbed perfect lattice dislocation. Then, decomposition of the latter into two displacement shift complete (DSC) products occurs. Complex reactions between DSC dislocations yield further stress relaxation. The role of the stacking-fault energy in the dislocation–GB interactions is pointed out.     

Investigation of tensile deformation mechanisms at room temperature in a new Ni-based single crystal superalloy

The deformation microstructures of a new Ni-based single crystal superalloy, M 4706, have been characterized by transmission electron microscopy after interrupted tensile tests at room temperature. It is found that besides shearing of γ′ precipitates by strongly coupled dislocations, another unusual shearing process involving a single a/2 〈1?0?1〉 matrix dislocation as well as the formation of the isolated superlattice stacking fault and Shockley loop also operates actively during initial yielding. Based on experimental observations, occurrence of these different shearing processes is discussed.     

Shuffle-set dislocation nucleation in semiconductor silicon device

We have found that a shuffle-set dislocation is nucleated in a semiconductor silicon device subjected to severe thermal processing. The dislocation transforms into a dissociated glide-set dislocation after annealing at 500°C. A possible mechanism for the nucleation of a perfect shuffle-set dislocation during thermal processing is that the dislocation nucleus was nucleated at a low temperature during prior ion-implantation processing.     

Structural changes induced by low-energy electron irradiation in GaSb

Structural changes in GaSb (001) thin films upon low-energy electron (125?keV) irradiation have been studied by in situ transmission electron microscopy. No structural changes were observed for irradiation at room temperature. However, in a sample irradiated at 473?K domains of {110} variant, rotated 90° from each other, were formed in the matrix. The average diameter of the domains was approximately 18?nm in the sample irradiated to a fluence of 4.8?×?10²⁴?electrons/m². It is considered that the domains are pseudo-{110} planes in the matrix formed by electron-irradiation-induced Shockley partial dislocations.     

Dislocation dissociation and stacking-fault energies in Ge1-xSix alloys

Dislocations in deformed Ge_1-xSi_x alloys in the whole range 0 < x < 1 have been investigated by means of weak-beam transmission electron microscopy. They are dissociated into Shockley partial dislocations bounding intrinsic stacking-faults. The intrinsic stacking-fault energy in the alloys decreases from 61 +/- 10 to 55 +/- 10 mJm^-2 with increasing Si content.     

Dynamic formation and destruction process of stacking fault tetrahedra in single-crystal Ni during nanoscale cryo-rolling

Stacking fault tetrahedra (SFTs) are known to form during the rolling process of face-centered cubic metals and to deteriorate their structural properties. However, the atomistic mechanism of formation and destruction of SFTs during such material processing is still unclear. We have performed molecular dynamics simulations of the nanoscale cryo-rolling process for single-crystal nickel and here report the mechanism behind the formation and collapse of SFTs. It is found that SFTs are formed through dissociation of Shockley partial dislocation loops in the specimen. On the other hand, destruction of SFTs occurs under compressive stress and follows an inverse Silcox-Hirsch mechanism.     

Transmission electron microscopy of dislocations in SrTiO3

Dislocations have been introduced in SrTiO₃ by Vickers indentation at room temperature and analysed by transmission electron microscopy. The slip systems in SrTiO₃ were identified as ?110?-{110}. ?110? dislocations are dissociated into two partial dislocations. The stacking-fault energy γSF was determined to be 136 ± 15 mJm^-2.     

In situ observation of twin boundary migration in copper with nanoscale twins during tensile deformation

In situ transmission electron microscopy observations are reported of the dynamic process of twin boundary migration in Cu with nanoscale twins. The experiment provides the first direct evidence of twin boundary migration via Shockley partial dislocation emission from the twin boundary/grain boundary intersections, and reveals that such migration is the dominant deformation mechanism in the initial stage of plastic straining. The behaviour is discussed in comparison with molecular dynamics simulations and in terms of the unique characteristics of the sample microstructure.     

Transformation of Shockley into Frank stacking faults in a ZnS 0.04 Se 0.96 /GaAs (001) heterostructure

We report the transformation of Shockley partial dislocations (PDs) into Frank PDs in lattice-matched ZnS 0.04 Se 0.96 /GaAs(001) as investigated by transmission electron microscopy. The ZnS 0.04 Se 0.96 layers, with a nominal thickness of 70 nm, were grown on GaAs(001) by metal-organic chemical vapour deposition at 350°C. We mainly find stacking-fault pairs on the (111) and planes that are bound by Shockley PDs with Burgers vector . Different reactions are observed between PDs taking place in situ in the electron microscope, leading to the transformation of Shockley PDs into Frank PDs with and stacking faults on the or planes.     

Dislocation nucleation and vacancy formation during high-speed deformation of fcc metals

Recently, a dislocation-free deformation mechanism was proposed by Kiritani et al. on the basis of a series of experiments where thin foils of fcc metals were deformed at very high strain rates. In the experimental study, they observed a large density of stacking fault tetrahedra but very low dislocation densities in the foils after deformation. This was interpreted as evidence for a new dislocation-free deformation mechanism, resulting in a very high vacancy production rate. In this paper we investigate this proposition using large-scale computer simulations of bulk and thin films of copper. To favour such a dislocation-free deformation mechanism, we have made dislocation nucleation very difficult by not introducing any potential dislocation sources in the initial configuration. Nevertheless, we observe the nucleation of dislocation loops, and the deformation is carried by dislocations. The dislocations are nucleated as single Shockley partials. The large stresses required before dislocations are nucleated result in a very high dislocation density, and therefore in many inelastic interactions between the dislocations. These interactions create vacancies and a very large vacancy concentration is quickly reached.     

Dissociation of dislocations in MgAl2O4 spinel deformed at low temperatures

Abstract

When spinel is deformed in compression at 400°C along 〈110〉, the primary slip plane is found to be {111} with cross-slip occurring on a {001} plane. A comparison of weak-beam images of dislocations from both systems indicates that all dislocations which belong to the primary slip plane are dissociated out of the {111} plane independent of the character of the dislocation. It is proposed that deformation occurs by motion of dislocations in their dissociated state and that the partial dislocations actually glide on parallel glide planes. Movement of these dissociated dislocations is then accompanied by a concurrent migration of the stacking fault which takes place by a local shuffling of the cations. A stacking fault energy for conservative dissociation at 400°C on {001} of 530±90mJ m^?2 has been determined from weak-beam images of screw dislocations.     

Deformation twins induced by multi-mode deformation in nanocrystalline copper

A multi-mode deformation model is used in a molecular dynamics simulation of nanocrystalline copper. Abundant deformation twin lamellae are developed by shearing the following compression to the elastic limit. Deformation twins (DTs) nucleate through two different mechanisms facilitated by Shockley partial slips. Interactions between DTs and Shockley partials are observed in this simulation.     

Microstructure of icosahedral Al-Pd-Mn quasicrystals deformed at room temperature in an anisotropic confining medium

Plastic deformation of Al-Pd-Mn icosahedral quasicrystals has been achieved at room temperature using a high-confining-pressure medium. The deformation microstructure, investigated by transmission electron microscopy, is characterized by long straight bands of dislocations. A detailed analysis of the dislocation configurations indicates that the plastic deformation is controlled by dislocation glide.     

Application of electron channelling contrast to the investigation of strain localization effects in cyclically deformed fcc crystals

The dislocation substructure and the glide activity in cyclically deformed nickel single crystals have been studied using the channelling contrast of backscattered electrons in a scanning electron microscope. Dislocation arrangements which arise in the saturation region after cyclic loading at room temperature and at one elevated temperature are considered. The electron channelling contrast technique is shown to be a useful instrument for the qualitative and quantitative characterization of the dislocation pattern on a macroscopic and a mesoscopic scale. The correlation between the specific dislocation structure in persistent slip bands PSBs and the localized glide activity of PSBs and PSB macrobands are considered.