Shape deformation by moving a glissile interface with one set of misfit dislocations

Transformation and misfit dislocations are used to describe the motion of glissile interfaces with one set of misfit dislocations in the framework of the Frank?Bilby equation. The sweep of these glissile interfaces brings about an invariant-plane-strain type shape deformation. Our approach explains the glissile motion of martensitic interfaces and small-angle symmetrical tilt grain boundaries. It is consistent with the phenomenological theory of martensite crystallography but more flexible.     

On the determination of the nature of misfit dislocations in semiconductor strained-layer heterostructures

Abstract

The study of the mechanisms of formation of misfit dislocations in latticemismatched semiconductor interfaces requires a comprehensive characterization of these dislocations. In particular the determination of the sense of their Burgers vectors by transmission electron microscopy makes it possible to show that they contribute to removing part of the mismatched-induced interfacial strain. Furthermore the nature (αorβ) of the dislocations can then be determined. The different methods of determination of the sense of Burgers vectors are reviewed and then applied to InGaAs/GaAs superlattices.     

Misfit disclinations and dislocations at crystal-glass interfaces

A theoretical model is suggested which describes misfit defect structures at crystal-glass interfaces. In the framework of the model the two basic types of misfit defect are distinguished: misfit disclinations (generated as extensions of parent disclinations present in the adjacent glassy phase) and 'dilatation' misfit dislocations (contributing to accommodation of the dilatation misfit associated with difference between the characteristic interatomic distances in the adjacent crystalline and glassy phases). The elastic energy density of crystal-glass interfaces is estimated.     

HRTEM observation of misfit dislocations at non-faceted Al–Pb interfaces

Al–Pb samples containing 1?at.%?Pb were produced by high-energy ball milling and investigated by high-resolution transmission electron microscopy. The Pb inclusions embedded in an Al matrix exhibit a non-faceted, curved morphology. Dislocations have been found to accommodate the misfit of about 22% at the Al–Pb interfaces. Burgers circuits, drawn around these misfit dislocations, exhibit closing failures of the type a₀ /4〈211〉.     

Dipole of misfit dislocations in axially symmetric structures

The nucleation of a pair of misfit dislocations of Burgers vectors b 1 and b 2 with b 1 + b 2 = 0 has been studied for the case of an axially symmetric two-phase structure. Considering a cylindrical inclusion epitaxially stressed in a unbounded matrix, the variation in the total energy due to the formation of the dipole has first been determined as a function of the radius of the inclusion and the epitaxial stress. The conditions for nucleation of the dipole on the interface have then been investigated as a function of the ratio of the shear modulus and of the misfit stress.     

Role of cross-slipping in formation of edge dislocations in heteroepitaxial systems GeSi-on-Si(001) and Ge-on-InGaAs/GaAs

Edge misfit dislocations (MDs) formed as result of reactions between 60° glissile threading dislocations and 60° MDs lying on an intersecting glide plane were found in strained GeSi-on-Si(001) and Ge-on-InGaAs/GaAs films. It was demonstrated that dislocations penetrating from the InGaAs buffer layer to the strained Ge film can provoke formation of not only 60° MDs, but also edge MDs on the interface even at minor mismatch of the lattice parameters of the film and the InGaAs/GaAs virtual substrate.     

The kinetic limit of superheating induced by semicoherent interfaces

The superheating behaviour of embedded particles induced by semicoherent interfaces has been observed in many circumstances. In this paper, a phenomeno‐ logical model for melt nucleation on misfit dislocations at a semicoherent interface is proposed. A kinetic limit for semicoherent-interface-induced superheating, which is in good agreement with the results of experiments and computer simulations, is derived from this model. Calculations and analyses based on the model reveal that melting prefers to initiate at the semicoherent interface and that superheating of embedded particles is possible for a melt nucleation contact angle less than 90°. Among the matrix-dependent parameters, the contact angle and the shear modulus of the matrix are found to be dominant in determining the superheating of embedded particles.     

Atomic arrangement at the 3C-SiC/Si(001) interface revealed utilising aberration-corrected transmission electron microscope

The atomistic structure of the 3C-SiC/Si(001) interface has been investigated using a combination of aberration-corrected transmission electron microscopy and a newly developed image processing method for eliminating artificial contrast. The structures having periods four times longer than those of the silicon lattice have been observed distinctly in images taken along both Si[110] and Si[100] directions. Contrary to theoretical models proposed previously, the interface of the three-dimensional structural model that we constructed on the basis of our experiments has a silicon-rich configuration. We have clarified that the strain field induced by the two-dimensional misfit between Si(001)-(4?×?4) and SiC(001)-(5?×?5) is relaxed by the two-dimensional network of misfit dislocations; simple edge dislocations with [100] and [010] directions and Lomer dislocations with [110] and [110] directions. The atomistic structures of the Lomer dislocations have been also clarified.     

HRTEM observation of interfacial dislocations at faceted Al–Pb interfaces

Al–Pb ribbons containing 1?at.%?Pb have been produced by melt-spinning and subsequently investigated by high-resolution transmission electron microscopy. It is shown that the lattice mismatch of about 22% between the nanometre-sized Pb inclusions and the surrounding Al matrix is accommodated by a periodic array of misfit dislocations at the Al–Pb interface. The closing failures of Burgers circuits drawn around misfit dislocations on {111} and {100} facets identify the corresponding Burgers vectors as (a ₀/4)? 211 ? and (a ₀/2)? 110?, respectively. The Burgers vector of (a ₀/4)? 211? corresponds to the projected edge part of a 60° (a ₀/2)? 110? dislocation. The Pb inclusions themselves appear to be free of defects.     

Experimental observation of the dislocation walls in heterostructures with two interfaces: Ge/Ge0.5Si0.5 10 nm/Si(001) as an example

High-resolution electron microscopy (HREM) at the atomic scale has been applied to study the edge dislocation redistribution between interfaces in Ge/Ge_0.5Si_0.5/Si(0?0?1) heterostructures. Our results provide a direct explanation that plastic relaxation of the GeSi buffer layer proceeds owing to motion of Lomer-type dislocation complexes consisting of a pair of complementary 60° dislocations with the ends of the {1?1?1} extra planes being located at a distance of ~2–12 interplanar spacings from each other. It is demonstrated that edge dislocations belonging to the upper and lower interfaces become arranged one under the other and dislocation walls are formed. The distributions of tension and compression in the [0?0?1] direction between two edge dislocations, obtained by processing the HREM image, testify to superposition of strain fields.     

Presence of ε-martensite as an intermediate phase during the strain-induced transformation of SUS304 stainless steel

We have investigated the formation process of α′-martensite from the γ-phase induced by external strain using in situ synchrotron diffraction experiments, combined with Lorentz transmission electron microscopy (TEM) and high-resolution TEM observations. It is clearly demonstrated that ε-martensite with hexagonal symmetry appears as an intermediate structure during the plastic deformation of SUS304 stainless steel. In addition to stacking faults and dislocations, interfaces between the twin structures presumably play a key role in the formation of ε-martensite.     

Observation of strain distributions in partially relaxed In0.2Ga0.8As on GaAs using electron channelling contrast imaging

Electron channelling contrast imaging (ECCI) has been used to image misfit dislocations between single epitaxial layers (epilayers) of In0.2Ga0.8As grown on GaAs (001). Bulk specimens of the as-grown material were examined over a range of epilayer thickness from 25 to 3000 nm. Spectral analysis of ECCI intensity traces was used to establish whether strain fields from the individual dislocations overlapped. Significant overlapping of strain fields was first observed at an epilayer thickness of 100 nm which corresponds well to the onset of macroscopic strain relaxation.     

Dislocations in Bi-Pb-Sr-Ca-Cu-O superconductors

Abstract

Dislocations and dislocation networks in superconducting Bi-Pb-Sr-Ca-Cu-O have been observed by means of TEM, confirming that this compound is a layer structure with low stacking fault energy. On the basal plane, dislocations and dislocation networks dissociate into partial dislocations and partial dislocation networks. However, the dissociation of [010] dislocations is hardly observed, which is related to the structural characteristics of the compound.     

Interaction and passing stress of two threading dislocations of opposite sign in a confined channel

The binding and unbinding of two threading dislocations in a channel of width d is considered in the context of the persistent slip band (PSB) problem. It is shown that previous analytical estimates of the overall passing stress between two screw-like threading arms have only qualitative validity. In particular, earlier treatments do not recognize the importance of bowing corrections in all limits, and neglect the effects of the opposing dislocation's misfit arms on the passing stress. As an alternative, accurate numerical escape functions are presented for the case of d?=?1?µm, in a form suitable for approximate scaling to other values of d. Although the numerical prediction for the overall passing stress is in good agreement with experimental values of the flow stress observed in the presence of PSBs, we argue that this in fact represents a disagreement, since it is well known that the flow stress in the soft-channel parts of the inhomogeneous PSB structure is reduced by long-range internal back stresses to values significantly below the average macroscopic flow stress of the PSB structure. We suggest that a statistical treatment including the effects of annihilation and of dislocations interacting over a range of separations can account for the discrepancy.     

Screw misfit dislocations perpendicular to one or two free surfaces

ABSTRACT

When a screw dislocation pierces one or two free surface(s), noticeable elastic relaxation takes place nearby these surfaces. To refine the theoretical interpretation of an electron microscopy image this relaxation should be included in a precise imaging model. In the present work, the relaxation field is evaluated for a periodic set of misfit screw dislocations normal to the free surface of a semi-infinite or plate-like heterogeneous bicrystal. The proposed approach uses an appropriate combination of known biperiodic elastic fields. For a homogeneous medium and when the period increases, the results around a misfit screw dislocation converge to those of Eshelby and Stroh (1951) who considered an isolated translation screw dislocation.     

The Peierls-Nabarro model revisited

We re-examine two important issues within the Peierls-Nabarro model, which are critical in obtaining accurate values for the Peierls stress. The first is related to the sampling scheme (double versus single counting) of the misfit energy across the glide plane and the second is the effect of atomic relaxation on the Peierls stress. We argue that the double-counting scheme is physically more appropriate. An analytical formula is derived for the Peierls stress of dislocations in alternating lattices. The atomic relaxation is shown to play an important role on the Peierls stress for narrow dislocations.     

Interfacial defects in YBa2Cu3O7-δ/SrTiO3(0 0 1) heterostructures studied by aberration-corrected ultrahigh-resolution electron microscopy

The microstructure of interfacial defects in YBa₂Cu₃O_7-δ/SrTiO₃(0?0?1) heterostructures has been investigated by aberration-corrected ultrahigh-resolution electron microscopy. We determine that c-axis-oriented YBa₂Cu₃O_7-δ thin films epitaxially grow on SrTiO₃(0?0?1) with two types of interface structure. The coalescence of nucleation sites with different types of interface structure leads to the formation of antiphase domain boundaries in YBa₂Cu₃O_7-δ thin films, which terminate at planar faults with different configurations near the interface. Stand-off misfit dislocations are observed and the dislocation core structure is explored. Based on the interface structure and interfacial defects, the initial growth mode of YBa₂Cu₃O_7-δ thin films on SrTiO₃(0?0?1) is discussed.