Role of cross-slipping in formation of edge dislocations in heteroepitaxial systems GeSi-on-Si(001) and Ge-on-InGaAs/GaAs

Edge misfit dislocations (MDs) formed as result of reactions between 60° glissile threading dislocations and 60° MDs lying on an intersecting glide plane were found in strained GeSi-on-Si(001) and Ge-on-InGaAs/GaAs films. It was demonstrated that dislocations penetrating from the InGaAs buffer layer to the strained Ge film can provoke formation of not only 60° MDs, but also edge MDs on the interface even at minor mismatch of the lattice parameters of the film and the InGaAs/GaAs virtual substrate.     

Dislocation formation in the partially coherent interfaces of an embedded layer in a semi-infinite matrix

The formation of two misfit edge dislocations is theoretically investigated in the interfaces of a layer embedded in a semi-infinite matrix. Assuming the matrix–layer interfaces are partially coherent, the energy variation resulting from the formation of the dislocations from the lateral free surface of the structure has been determined in the shearing stress field due to the partial misfit. The mechanical stability of the structure is analysed with respect to the dislocation formation as a function of the size of the coherent region of the interface and the misfit strain.     

Misfit disclinations and dislocations at crystal-glass interfaces

A theoretical model is suggested which describes misfit defect structures at crystal-glass interfaces. In the framework of the model the two basic types of misfit defect are distinguished: misfit disclinations (generated as extensions of parent disclinations present in the adjacent glassy phase) and 'dilatation' misfit dislocations (contributing to accommodation of the dilatation misfit associated with difference between the characteristic interatomic distances in the adjacent crystalline and glassy phases). The elastic energy density of crystal-glass interfaces is estimated.     

Atomic arrangement at the 3C-SiC/Si(001) interface revealed utilising aberration-corrected transmission electron microscope

The atomistic structure of the 3C-SiC/Si(001) interface has been investigated using a combination of aberration-corrected transmission electron microscopy and a newly developed image processing method for eliminating artificial contrast. The structures having periods four times longer than those of the silicon lattice have been observed distinctly in images taken along both Si[110] and Si[100] directions. Contrary to theoretical models proposed previously, the interface of the three-dimensional structural model that we constructed on the basis of our experiments has a silicon-rich configuration. We have clarified that the strain field induced by the two-dimensional misfit between Si(001)-(4?×?4) and SiC(001)-(5?×?5) is relaxed by the two-dimensional network of misfit dislocations; simple edge dislocations with [100] and [010] directions and Lomer dislocations with [110] and [110] directions. The atomistic structures of the Lomer dislocations have been also clarified.     

On the determination of the nature of misfit dislocations in semiconductor strained-layer heterostructures

Abstract

The study of the mechanisms of formation of misfit dislocations in latticemismatched semiconductor interfaces requires a comprehensive characterization of these dislocations. In particular the determination of the sense of their Burgers vectors by transmission electron microscopy makes it possible to show that they contribute to removing part of the mismatched-induced interfacial strain. Furthermore the nature (αorβ) of the dislocations can then be determined. The different methods of determination of the sense of Burgers vectors are reviewed and then applied to InGaAs/GaAs superlattices.     

HRTEM observation of misfit dislocations at non-faceted Al–Pb interfaces

Al–Pb samples containing 1?at.%?Pb were produced by high-energy ball milling and investigated by high-resolution transmission electron microscopy. The Pb inclusions embedded in an Al matrix exhibit a non-faceted, curved morphology. Dislocations have been found to accommodate the misfit of about 22% at the Al–Pb interfaces. Burgers circuits, drawn around these misfit dislocations, exhibit closing failures of the type a₀ /4〈211〉.     

Dissociation of dislocations in MgAl2O4 spinel deformed at low temperatures

Abstract

When spinel is deformed in compression at 400°C along 〈110〉, the primary slip plane is found to be {111} with cross-slip occurring on a {001} plane. A comparison of weak-beam images of dislocations from both systems indicates that all dislocations which belong to the primary slip plane are dissociated out of the {111} plane independent of the character of the dislocation. It is proposed that deformation occurs by motion of dislocations in their dissociated state and that the partial dislocations actually glide on parallel glide planes. Movement of these dissociated dislocations is then accompanied by a concurrent migration of the stacking fault which takes place by a local shuffling of the cations. A stacking fault energy for conservative dissociation at 400°C on {001} of 530±90mJ m^?2 has been determined from weak-beam images of screw dislocations.     

The kinetic limit of superheating induced by semicoherent interfaces

The superheating behaviour of embedded particles induced by semicoherent interfaces has been observed in many circumstances. In this paper, a phenomeno‐ logical model for melt nucleation on misfit dislocations at a semicoherent interface is proposed. A kinetic limit for semicoherent-interface-induced superheating, which is in good agreement with the results of experiments and computer simulations, is derived from this model. Calculations and analyses based on the model reveal that melting prefers to initiate at the semicoherent interface and that superheating of embedded particles is possible for a melt nucleation contact angle less than 90°. Among the matrix-dependent parameters, the contact angle and the shear modulus of the matrix are found to be dominant in determining the superheating of embedded particles.     

Interactions between interfacial dislocations and γ/γ′ interface during high temperature – low stress creep in nickel-based single crystal superalloy

ABSTRACT

The interaction between interfacial dislocations and γ/γ′ interface is critical to the high temperature creep properties of single crystal superalloys. However, only a few studies have paid attention to the detailed structure such as local interfacial morphologies and the elemental distribution around interfacial dislocations. In this paper, the interfacial protrusions and related dislocations in a single crystal superalloy after creep at high temperature – low stress have been investigated in detail. It is found that the morphology and size of the interfacial protrusions remain almost the same during the early and middle stages of high temperature creep, which indicates a local equilibrium at the interfacial protrusions. Steps at different height are formed at the γ/γ′ interface at the initial stage of high temperature creep since dislocations could move along the γ/γ′ interface, which indicates that dislocation motion at different creep stage may affect the morphology of γ/γ′ interface.     

Experimental observation of the dislocation walls in heterostructures with two interfaces: Ge/Ge0.5Si0.5 10 nm/Si(001) as an example

High-resolution electron microscopy (HREM) at the atomic scale has been applied to study the edge dislocation redistribution between interfaces in Ge/Ge_0.5Si_0.5/Si(0?0?1) heterostructures. Our results provide a direct explanation that plastic relaxation of the GeSi buffer layer proceeds owing to motion of Lomer-type dislocation complexes consisting of a pair of complementary 60° dislocations with the ends of the {1?1?1} extra planes being located at a distance of ~2–12 interplanar spacings from each other. It is demonstrated that edge dislocations belonging to the upper and lower interfaces become arranged one under the other and dislocation walls are formed. The distributions of tension and compression in the [0?0?1] direction between two edge dislocations, obtained by processing the HREM image, testify to superposition of strain fields.     

Two different types of shear-deformation behaviour in Au–Cu multilayers

Localised shear deformation of a material is usually identified as a particular feature of deformation inhomogeneity. Here, we show two different types of shear deformation-behaviour that occurred in Au–Cu multilayers subjected to microindentation load, namely, a cooperative-layer-buckling-induced shear banding in a nanoscale multilayer and a direct localised shearing across a layer interface along a shear plane in a submicron-scale multilayer. Theoretical analysis indicates that the formation of the two different types of shear deformation in the multilayers depends on a competition between the dislocation-pile-up-induced stress concentration at the layer interface and the barrier strength of the layer interface for glissile dislocation transmission.     

Threading dislocation with b=c+2a in 4H-SiC as determined by LACBED

The Burgers vectors of the so-called threading screw dislocations (a total of 28 dislocations) in 4H-SiC were determined by large-angle convergent-beam electron diffraction. A new type of TSD, that is, b = c + 2a dislocation, was identified. Thus, all of the four types of TSD predicted by Onda et al. [Phil. Mag. Lett. 93 (2013) p.591] were identified.     

Dipole of misfit dislocations in axially symmetric structures

The nucleation of a pair of misfit dislocations of Burgers vectors b 1 and b 2 with b 1 + b 2 = 0 has been studied for the case of an axially symmetric two-phase structure. Considering a cylindrical inclusion epitaxially stressed in a unbounded matrix, the variation in the total energy due to the formation of the dipole has first been determined as a function of the radius of the inclusion and the epitaxial stress. The conditions for nucleation of the dipole on the interface have then been investigated as a function of the ratio of the shear modulus and of the misfit stress.     

First-principles investigation of bowing parameter in zinc-blende ScxGa1−xN

Helium generated in materials by the nuclear reaction (n,?α) is generally considered to be harmful. It is well-known that helium prompts not only the nucleation of interstitial-type dislocation loops, but also the nucleation of voids in metals and alloys irradiated with high-energy particles, which degrades their mechanical properties. In this study, however, we find that helium trapped by dislocations in Ni increases both the ultimate tensile strength and total elongation.     

Observation of strain distributions in partially relaxed In0.2Ga0.8As on GaAs using electron channelling contrast imaging

Electron channelling contrast imaging (ECCI) has been used to image misfit dislocations between single epitaxial layers (epilayers) of In0.2Ga0.8As grown on GaAs (001). Bulk specimens of the as-grown material were examined over a range of epilayer thickness from 25 to 3000 nm. Spectral analysis of ECCI intensity traces was used to establish whether strain fields from the individual dislocations overlapped. Significant overlapping of strain fields was first observed at an epilayer thickness of 100 nm which corresponds well to the onset of macroscopic strain relaxation.     

Screw misfit dislocations perpendicular to one or two free surfaces

ABSTRACT

When a screw dislocation pierces one or two free surface(s), noticeable elastic relaxation takes place nearby these surfaces. To refine the theoretical interpretation of an electron microscopy image this relaxation should be included in a precise imaging model. In the present work, the relaxation field is evaluated for a periodic set of misfit screw dislocations normal to the free surface of a semi-infinite or plate-like heterogeneous bicrystal. The proposed approach uses an appropriate combination of known biperiodic elastic fields. For a homogeneous medium and when the period increases, the results around a misfit screw dislocation converge to those of Eshelby and Stroh (1951) who considered an isolated translation screw dislocation.     

HRTEM observation of interfacial dislocations at faceted Al–Pb interfaces

Al–Pb ribbons containing 1?at.%?Pb have been produced by melt-spinning and subsequently investigated by high-resolution transmission electron microscopy. It is shown that the lattice mismatch of about 22% between the nanometre-sized Pb inclusions and the surrounding Al matrix is accommodated by a periodic array of misfit dislocations at the Al–Pb interface. The closing failures of Burgers circuits drawn around misfit dislocations on {111} and {100} facets identify the corresponding Burgers vectors as (a ₀/4)? 211 ? and (a ₀/2)? 110?, respectively. The Burgers vector of (a ₀/4)? 211? corresponds to the projected edge part of a 60° (a ₀/2)? 110? dislocation. The Pb inclusions themselves appear to be free of defects.