Characterization of Al/n-ZnO/p-Si/Al structure with low-cost solution-grown ZnO layer

We report the fabrication of Al/n-ZnO/p-Si/Al diode structures with a flower-like ZnO layer. The average grain size, microstrain and dislocation density in the ZnO layer were determined as 25?nm, 1.55?×?10^?3 and 3.23?×?10¹³?cm^?2, respectively. From absorption spectra, the optical band gap was found to be ～3.17?eV. A red shift was attributed to non-stoichiometry arising from Zn⁺² ions substituting for oxygen vacancies. The ideality factor was determined as 1.55. The barrier height was calculated as 0.71?eV from I–V characteristics and 0.73?eV using the Norde plots.     

Synthesis and characterization of nanocrystalline MoBi2Te5 thin films for photoelectrode applications

Molybdenum bismuth telluride thin films have been prepared on clean glass substrate using arrested precipitation technique which is based on self-organized growth process. As deposited MoBi₂Te₅ thin films were dried in constant temperature oven at 110°C and further characterized for their optical, structural, morphological, compositional, and electrical analysis. Optical absorption spectra recorded in the wavelength range 300–800?nm showed band gap (E _g) 1.44?eV. X-ray diffraction pattern and scanning electron microscopic images showed that MoBi₂Te₅ thin films are granular, nanocrystalline having rhombohedral structure. The compositional analysis showed close agreements in theoretical and experimental atomic percentages of Mo⁴⁺, Bi³⁺, and Te^2? suggest that chemical formula MoBi₂Te₅ assigned to as deposited molybdenum bismuth telluride new material is confirmed. The electrical conductivity and thermoelectric power measurement showed that the films are semiconducting with n-type conduction. The fill factor and conversion efficiency was characterized by photoelectrochemical (PEC) technique. In this article, we report the optostructural, morphological, compositional, and electrical characteristics of nanocrystalline MoBi₂Te₅ thin films to check its suitability as photoelectrode in PEC cell.     

The temperature dependence of the optical dispersion parameters in Si and Ge

Abstract

In Si and Ge, the optical dispersion parameters (single-oscillator energy E_o , dispersion energy E_d and bond energy gap E_g developed by Wemple and DiDomenico, and Phillips) have been analysed in the temperature range 100-300 K using data obtained by Icenogle et al. E_o and E_g exhibit a very small temperature dependence in both materials. The thermal coefficients of the dispersion energy, dE_d/dT, have opposite signs (Si, –41·9 × 10^?4eVK^?1; Ge, +37·7 × 10^?4eVK^?1).     

Effect of mechanical stress on the absorption band tail of cubic boron nitride thin films synthesized by inductively coupled radio-frequency plasma chemical vapour deposition

Thin films of cubic boron nitride were deposited on silica and Si substrates by inductively coupled radio-frequency plasma chemical vapour deposition (IPCVD) technique using a B₂H₆?+?N₂?+?Ar gas mixture. Cubic phase formation was confirmed by glancing-angle X-ray diffraction studies, which showed reflections up to (311). Fourier-transform infrared (FTIR) spectra also indicated the predominantly cubic nature of the deposited films. The optical properties of the films were studied in the wavelength range 200–1000?nm. Both direct and indirect transitions were found to be present. Mechanical stress in the grain-boundary region of the films seems to contribute significantly to the optical absorption below the band gap. The intercrystalline barrier height (E _b) and the trap state density (Q _t ) were obtained from an analysis of the effects of grain boundaries on the optical properties of the samples.     

Electrical properties and local structure of n-type conducting amorphous indium sulphide

An n-type amorphous chalcogenide, In₄₉S₅₁, having a band gap of 1.9eV, has been found. The conductivity in as-prepared films was ～10^?4?S?cm^?1, which increased to 1?×?10^?1?S?cm^?1 on post-annealing at 125°C in vacuum, accompanied by a reduction in the sulphur content of the films. TEM observations showed the amorphous nature of the films before and after annealing. Both Seebeck and Hall coefficients are negative, indicating that the major carriers are electrons. The Hall mobility can be as large as 26?cm²?V^?1?s^?1 at 300?K. No significant changes to the optical absorption were observed upon annealing. Analysis of the X-ray radial distribution function reveals that the sulphur atoms have four-fold coordination, making the structure more rigid than conventional amorphous chalcogenides in which the chalcogen is alloyed to elements of group IV or V of the periodic table. We tentatively associate the electron carrier generation with the formation of sulphur vacancies.     

Investigations of the optical spectra and EPR g-factors for the tetragonal Ce3+ centers in YPO4 and LuPO4 crystals

The optical spectral band positions and EPR g-factors (g_‖ , g _⊥) for the tetragonal Ce³⁺ centers in YPO₄ and LuPO₄ crystals with the zircon-structure are calculated using a complete diagonalization (of the energy matrix) method (CDM) related to 4f¹ ions in tetragonal symmetry. In this method, the Zeeman interaction term are added to the Hamiltonian in the conventional CDM and so no perturbation calculations are required to obtain the g factors. The crystal-field parameters used in the calculations are obtained from the superposition model in which the local lattice relaxation related to the bonding lengths is considered. The calculated results are in reasonable agreement with the experimental values. It is found that the four observed optical bands for both the systems can be attributed to Ce³⁺ ions in a tetragonal crystal field.     

Electrical properties of thin films of a-Ga x Te100− x composed of nanoparticles

Thin films of Ga _x Te_{100? x} (x?=?3, 6, 9 and 12) have been synthesized by thermal evaporation. From SEM images, it is observed that all the films contain nanoparticles of sizes varying from 100 to 200?nm. The dc electrical conductivity of the as-deposited films of Ga _x Te_100?x nanoparticles is measured as a function of temperature range from 298 to 383?K, and increases exponentially with temperature. The value of the activation energy, calculated from the slope of ln?σ _dc versus 1000/T plots, is found to decrease with increase in the Ga content. On the basis of the value of the pre-exponential factor σ _o, it is suggested that the conduction is due to thermally assisted tunneling of carriers in localized states near the band edges. The optical measurements suggest an indirect optical band gap in this system. The value of the optical band gap decreases on increasing the Ga concentration.     

Thermal-equilibrium processes and electronic transport in undoped hydrogenated amorphous silicon

Abstract

The temperature and time dependence of the d.c. conductivity of undoped hydrogenated amorphous silicon is presented. Measurements of the electronic transport are reported, with particular emphasis on the effects of annealing and cooling the samples. Two regimes of behaviour are observed. When samples are rapidly cooled from 200°C below a temperature T _E～145°C a non-equilibrium dark conductivity, higher than that corresponding to slow cooling, is observed. The electronic and atomic structure then slowly relax and the time dependence of the excess conductivity is well described by a stretched exponential function. The second regime above T _E corresponds to a relaxation time short compared to experimental times and the conductivity is independent of which order the annealing temperature is chosen. Thus the thermal equilibrium processes observed in undoped samples are qualitatively very similar to those observed in doped samples as recently reported in the literature.     

Nucleation of He bubbles in amorphous FeBSi alloy irradiated with He ions

It is interesting to investigate the formation of He bubbles in amorphous alloys because point defects do not exist in amorphous materials. In the present study, the microstructural evolution of amorphous Fe₇₉B₁₆Si₅ alloy, either irradiated with 5?keV He⁺ ions or implanted with 150?eV He⁺ ions without causing displacement damage, and then annealed at a high temperature, was investigated using transmission electron microscopy (TEM). Vacancy-type defects were formed in the amorphous alloy after irradiation with 5?keV He⁺ ions, and He bubbles formed during annealing the irradiated samples at high temperature. On the other hand, for samples implanted with 150?eV He⁺ ions, although He atoms are also trapped in the free volume, no He bubbles were observed during annealing the samples even up to 873?K. In conclusion, the formation of He bubbles is related to the formation and migration of vacancy-type defects even in amorphous alloys.     

Distribution of the midgap density of states and their capture cross-sections in hydrogenated amorphous silicon deduced from space-charge-limited conduction in the dark and under illumination

Space-charge-limited current measurements in the dark and under illumination offer the means of obtaining the density of states N(E) and their capture cross-sections s(E) in a range of energy E above the equilibrium Fermi level in hydrogenated amorphous silicon (a-Si:H) n⁺–i–n⁺ structures. N(E) and s(E) have been measured in the energy region from 0.65 to 0.5?eV below the conduction-band edge E _c. The decrease on s(E) observed as the energy E increases agrees with recent observations and is attributed to the coexistence of two types of defect having different capture cross-sections. This is confirmed by light soaking of a-Si:H which makes the defects with high s(E) predominant.     

Thermal stability and glass-forming ability of Se80− x Te20Ag x (x = 0, 3, 5, 7 and 9) chalcogenide glasses

The thermal stability and glass-forming ability (GFA) of Se_{80? x} Te₂₀Ag _x (x?=?0,?3,?5,?7 and 9) chalcogenide glasses have been investigated using differential scanning calorimetry (DSC). The DSC runs have been taken at five different heating rates (10, 20, 30, 40 and 50?K/min) under non-isothermal condition. The thermal stability and GFA are monitored through determination of the temperature difference ΔT?=?T _c???T _g, where T _c is the onset crystallization temperature, T _g is the glass transition temperature, H ^l is the stability parameter, ΔH _c is the enthalpy released during crystallization and F _i is the fragility index. The activation energy of crystallization E _c and crystallization rate factor K have also been determined as indicators of the thermal stability of the above-mentioned samples. It is found that Se₇₁Te₂₀Ag₉ is the most stable among all the samples of the series.     

Effects of annealing temperature on structural,optical, and electrical properties of antimony-doped tin oxide thin films

Antimony-doped tin oxide (ATO) films, approximately 320 nm in thickness, have been prepared by electron beam evaporation onto glass substrates. The films were annealed at temperatures between 400°C and 550°C in air and their structure and surface morphologies were observed by X-ray diffraction (XRD) and atomic force microscopy (AFM) after the different annealing treatments. XRD patterns of the ATO thin films as-deposited and annealed at 400°C showed that they were amorphous, but annealing beyond 400°C caused the films to become polycrystalline with tetragonal structure and orientated in the (1 1 0) direction. The grain size in the annealed films, obtained from the XRD analysis, was in the range 146–256 Å and this increased with the annealing temperature. The dislocation density, cell volume and strain were found to decrease gradually with increasing annealing temperature. Photoluminescence spectra revealed an intensive blue/violet peak at 420 nm, which increased gradually in height with annealing. It is suggested that an increase in the population of Sb⁺⁵ ions might be the reason for the enhancement of the blue/violet emission. The optical properties of the films were also investigated in the UV-visible-NIR region (300–1000 nm). The optical constants, namely the refractive index n and the extinction coefficient k in the visible region were calculated. The optical energy band gap, as determined by the dependence of the absorption coefficient on the photon energy at short wavelengths, was found to increase from 3.59 to 3.76 eV with annealing temperature.     

Influence of In substitution and plastic deformation on AsGa-related photoluminescence in GaAs

Abstract

Low-temperature photoluminescence experiments have been carried out on semi-insulating GaAs crystals undoped or containing ～5 × 10¹⁹ In atoms cm^?3. A broad band peaking around 0·8eV is observed which is generally related to the antisite defect As_Ga. The effect of In substitution or plastic deformation is to shift this band towards higher energies by 10–25 meV. This positive energy shift is quantitatively accounted for by considering the stress fields induced by the incorporation of indium or the creation of dislocations.     

Cognitive,behavioral and psychological functioning in children with metopic synostosis: a meta-analysis examining the impact of surgical status

Neurodevelopmental delays are known to occur in children with metopic synostosis, but it is presently unclear whether the cognitive, behavioral and psychological outcomes of children with metopic synostosis differ to those of their healthy peers. This meta-analysis consolidated data from 17 studies (published prior to August 2017) that examined the cognitive, behavioral and psychological outcomes of children (n = 666; aged ≤19 yrs) with metopic synostosis. Hedges’g (g_w) effect sizes compared the outcomes of samples with metopic synostosis (unoperated, operated) to healthy controls or normative data and, where available, the prevalence of problems/disorders was calculated. Children with unoperated metopic synostosis performed significantly worse than their healthy peers on measures of: general cognition (g_w = ?.38), motor functioning, (g_w = ?.81), and verbal (g_w = ?.82) and visuospatial (g_w = ?.92) abilities. Children with operated metopic synostosis performed significantly worse on measures of motor functioning (g_w = ?.45), visuospatial skills (g_w = ?.32), attention (g_w = ?.50), executive functioning (g_w = ?.36), arithmetic ability (g_w = ?.37), and behavior (g_w = ?.34). Cognitive, behavioral, and psychological problems were prevalent, but variable. Overall, the cognitive, behavioral, and psychological outcomes of children with metopic synostosis are generally worse than their healthy peers, regardless of surgical status. However, research is sparse, samples small, controls are rarely recruited, and the severity of metopic synostosis often not stated. Nevertheless, the findings suggest that children with metopic synostosis are likely to experience a variety of negative outcomes and should therefore receive ongoing monitoring and support.     

Experimental evidence of relaxation arising from the motion of geometrical kinks on screw dislocations in iron

Abstract

Internal friction measurements with a superimposed bias stress have provided evidence for geometrical kink migration on screw dislocations in iron. This intrinsic process causes a relaxation phenomenon in internal friction which has been identified with the occurrence of a subpeak (below 20 K) of the α-peak. The effect of different bias stress has allowed us to evaluate the kink migration energy, E ^m _k ? 0·001eV.     

Growth of carbon nanotubes: effect of Fe diffusion and oxidation

The diffusion and surface oxidation rates of Fe deposited on Si and barrier layers of Al/SiO₂ and Al₂O₃/SiO₂ have been comparatively studied and correlated with the growth of carbon nanotubes (CNTs). Initially, Fe/Si, Fe/Al/SiO₂/Si and Fe/Al₂O₃/SiO₂/Si samples were subjected to thermal chemical vapour deposition (CVD) at ～650°C for ～30?min to grow the CNTs. Scanning electron microscopy analysis showed that the height of the CNTs on the Fe/Al₂O₃/SiO₂/Si samples was relatively high (～9.5–11?µm), as compared with the other samples. To investigate this, a few as-prepared samples were thermally annealed at ～650°C for ～30?min and characterized by dynamic secondary ion mass spectroscopy (D-SIMS) and X-ray photoelectron spectroscopy (XPS). The D-SIMS results showed that the diffusion depth, x _Fe, and magnitude of the diffusivity, D _Fe, of the Fe atoms are highest for the Fe/Si sample. This is attributed to vacancy-mediated migration, which leads to the formation of unstable, non-stoichiometric Fe–Si and Fe–O–Si phases. However, for the Fe/Al₂O₃/SiO₂/Si samples, the magnitudes of x _Fe and D _Fe are found to be the lowest, which indicates steric hindrance to Fe by the Al₂O₃ layers. The XPS analysis revealed that the surface metallic state, after annealing, is almost unaffected for the Fe/Al₂O₃/SiO₂/Si samples, whereas the majority of the Fe precipitate was observed to be oxidized in the case of the other samples.     

Distortion analysis of magnetic excitation – a novel method for non-destructive evaluation of depth of surface-hardening in ferritic steels

The influence of ferritic steel samples with different case-depths on the distortion behaviour of magnetic excitation voltage has been investigated. The systematic changes in the height and position of the peak and the trough on the ((dV_E/dt) vs. V_T) profile (distortion analysis of the magnetic excitation, DAME profile) reflect the difference in the magnetization process and hence the effect of distortion of V_E in samples with different case-depths. This study shows the potential of this simple DAME method for evaluation of ferromagnetic steel components.     

On a complexity-based way of constructivizing the recursive functions

Let g _E(m, n)=o mean that n is the Gödel-number of the shortest derivation from E of an equation of the form (m)=k. Hao Wang suggests that the condition for general recursiveness mn(g _E(m, n)=o) can be proved constructively if one can find a speedfunction _{s s}, with _s(m) bounding the number of steps for getting a value of (m), such that mn _s(m) s.t. g _E(m, n)=o. This idea, he thinks, yields a constructivist notion of an effectively computable function, one that doesn't get us into a vicious circle since we intuitively know, to begin with, that certain proofs are constructive and certain functions effectively computable. This paper gives a broad possibility proof for the existence of such classes of effectively computable functions, with Wang's idea of effective computability generalized along a number of dimensions.We are grateful to an anonymous referee for Studia Logica for valuable advice leading to substantial improvements in the presentation of the main definitions and theorem.     

Phase stability of Al3Nb as a function of nickel additions

Abstract

Phase stability of the intermetallic compound Al₃Nb is investigated as a function of nickel additions by band structure calculations based on an extended Hueckel tight-binding method. With this method, the electronic structure and total energies of the Al_6-n -Ni _n Nb₂ compounds (where n is an integer from 0 to 6) are calculated for both D0₂₂ and L1₂ structures under the assumption that nickel substitutes for aluminium. The electronic total energies obtained from integration of the energy states of all electrons considered have shown that the D0₂₂ structure is stable in the binary Al₃Nb compound as compared with the L1₂ structure; conversely, the L1₂ structure is stable for compounds with n values greater than 1. These calculations are in good agreement with X-ray diffraction results reported by Schubert and co-workers. Differences in the electronic total energy per atom between D0₂₂ and L1₂ are - 0·79 eV and 0·56 eV for n equal to 0 and 2, respectively.