Shuffle-set dislocation nucleation in semiconductor silicon device

We have found that a shuffle-set dislocation is nucleated in a semiconductor silicon device subjected to severe thermal processing. The dislocation transforms into a dissociated glide-set dislocation after annealing at 500°C. A possible mechanism for the nucleation of a perfect shuffle-set dislocation during thermal processing is that the dislocation nucleus was nucleated at a low temperature during prior ion-implantation processing.     

Misfit dislocation loops and critical parameters of quantum dots and wires

Quantum dots and wires, having a mismatch of crystal lattice parameters with respect to the surrounding matrix, are modelled by spherical and cylindrical inclusions, respectively. By considering the energy of a circular prismatic dislocation loop nucleation in the inclusions, the critical radius and critical dilatation for a dot and a wire are calculated. The results are compared with similar critical parameters for a mismatched film on a substrate.     

Image stresses of dislocation loops and lenticular inclusions,and their effects

Average image stresses in finite solids with defects are evaluated with the Tanaka–Mori–Mura method. It is found that the image stresses depend on the size of the defects in addition to their volume fraction. The failure of earlier approaches to obtain any size dependence is discussed.     

Mathematical modelling of nucleation and growth of crystals with buoyancy effects

A complete analytical solution of the integro-differential model describing the nucleation of crystals and their subsequent growth in a binary system with allowance for buoyancy forces is constructed. An exact analytical solution of the Fokker-Planck-type equation for the three-parameter density distribution function is found for arbitrary nucleation kinetics. Two important cases of the Weber–Volmer–Frenkel–Zel’dovich and Meirs kinetics are considered in some detail. It is shown that the solute concentration decreases and the distribution function increases with increasing the melt supercooling (with increasing the depth of a metastable system). It is demonstrated that the distribution function attains its minimum at a certain size of crystals owing to buoyancy forces.     

Creep behaviour of ice single crystals loaded in torsion explained by dislocation cross-slip

Torsion creep experiments are carried out in order to understand the physics of ice plasticity. A dislocation spreading mechanism based on double cross-slip of basal dislocations is proposed to explain the strong plastic anisotropy and the power law relationship between stress and strain rates. The scenario is tested using three-dimensional dislocation dynamics simulations. Numerical investigations give a stress exponent n?=?2.3 in agreement with experimental measurements. This dislocation spreading mechanism sheds a new light on the interpretation of former experimental observations.     

The orientation and temperature dependences of dislocation velocity in Ni 3 Al single crystals

The average velocities of screw dislocations in Ni 3 Al single crystals have been directly measured as a function of resolved shear stress (RSS) and orientation in the temperature domain of the flow stress anomaly using the etch-pit technique. The velocity was found to be extremely sensitive to the RSS in all cases. In contrast with ordinary metals, the screw dislocation velocities in Ni 3 Al show anomalous behaviour; under a constant RSS, the velocities decrease dramatically with increasing temperature. Furthermore, the velocities and the tension-compression asymmetry of the velocities depend on the orientation of applied stress.     

The flow stress contribution of the dislocation 'forest' in bcc lattices

The athermal flow stress contribution by junction reactions of a glide dislocation with a 'forest' of density rho is usually written as tau = alpha mu b rho ^1/2. The strength coefficient alpha has been computed for the bcc lattice by virtual displacement of triple nodes following the method of Puschl et al. (1982, Physica status solidi (a), 74, 211). In the isotropic approximation, the values for glide dislocations with 0, 30, 60 and 90^o character are as alpha = 0.18, 0.21, 0.19 and 0.22 respectively. A comparison with values calculated previously by Frydman is made, and good agreement is found when differences in the cut-off radii of the linear elastic solution are accounted for.     

On the ultra-high-strain rate shock deformation in copper single crystals: multiscale dislocation dynamics simulations

Multiscale dislocation dynamics plasticity (MDDP) calculations are carried out to simulate the mechanical response of copper single crystals that have undergone shock loading at high strain rates ranging from 1?×?10⁶ to 1?×?10¹⁰?s^?1. Plasticity mechanisms associated with both the activation of pre-existing dislocation sources and homogeneous nucleation of glide loops are considered. Our results show that there is a threshold strain rate of 10⁸?s^?1 at which the deformation mechanism changes from source activation to homogeneous nucleation. It is also illustrated that the pressure dependence on strain rate follows a one-fourth power law up to 10⁸?s^?1 beyond which the relationship assumes a one-half power law. The MDDP computations are in good agreement with recent experimental findings and compare well with the predictions of several dislocation-based continuum models.     

The effect of electropulsing on dislocation structures in [233] coplanar double-slip-oriented fatigued copper single crystals

The effect of high-current-density electropulsing on dislocation structures in a coplanar double-slip-oriented copper single crystal that had previously been fatigued is reported. The results show that, after electropulsing, vein structures are transformed to cell structures with some dark regions. It is proposed that the thermal compressive stress caused by electropulsing activates a coplanar slip system and leads to strong dislocation interactions between primary and coplanar slip systems, thereby forming cell structures. Partial recrystallization may occur by electropulsing, leading to the appearance of some dark regions.     

First principles determination of the Peierls stress of the shuffle screw dislocation in silicon

The Peierls stress of the a/2?110? screw dislocation belonging to the shuffle set is calculated for silicon using density functional theory. We have checked the effect of boundary conditions by using two models, the supercell method where one considers a periodic array of dislocations, and the cluster method where a single dislocation is embedded in a small cluster. The Peierls stress is underestimated with the supercell and overestimated with the cluster. These contributions have been calculated and the Peierls stress is determined in the range between 2.4?×?10^?2 and 2.8?×?10^?2?eV?Å^?3. When moving, the dislocation follows the {111} plane going through a low energy metastable configuration and never follows the 100 plane, which includes a higher energy metastable core configuration.     

Derivation of the antiphase-boundary energy of L1 2 long-range-ordered precipitates from measurements of the minimum size of stable dislocation loops

In an alloy that is strengthened by long-range-ordered particles, a matrix dislocation generates an antiphase boundary (APB) when it cuts through such a particle. The specific energy n APB of this APB has been measured for two fcc alloys with spherical coherent L12 ordered particles: an Al-7.5at.%Li-alloy and the commercial Ni-base superalloy Nimonic PE16. Peak-aged specimens have been deformed and Orowan loops searched for using transmission electron microscopy. n APB has been derived from the radii of the smallest dislocation loops which have been left behind around particles. Such an approach had been used previously, for example, by Raynor and Silcock and by Nembach et al . Here an improved evaluation method has been applied; it is based on the results of computer simulations of the equilibrium configurations of dislocation loops.     

Disruption of kinematic coordination in throwing under stress

The present study tested the conscious-control theory of the relationship between stress and performance. Performers under stress conditions consciously attempted to control their movements, disrupting the automaticity of control. Twenty-two male subjects (11 in Experiment 1 and 11 in Experiment 2) performed an underhand ball-throwing task using the non-dominant hand. The inter-trial variability of two kinematic measures was analyzed, namely arm-joint coordination during the throw and hand position at release (release point). Experiment 1 confirmed the validity of regarding these variability measures as indices of automaticity, as they did not vary in spite of resource shortage induced by a dual-task paradigm. In Experiment 2, in which stress led to a detriment in performance, the variability of joint coordination increased, whereas the release point became more fixed. These findings imply that throwing performance is impaired when the coordination is disrupted as a result of inflexible movement executed by conscious control.     

Thermodynamics of void nucleation in nanoparticles

The nucleation of voids at the initial stage of hollow nanoshell formation is described in terms of the thermodynamics of nucleation in systems of finite size (or small systems) pumped with vacancies by interdiffusion-driven vacancy influx. Crossovers from suppressed nucleation to metastable nucleus formation and then to stable nucleus formation are analysed, describing, in particular, the possibility of significant supersaturations with vacancies of the metallic core. It is shown that at higher temperatures it becomes more favourable to nucleate at once a large single void instead of multiple tiny voids.     

Changes in limb stiffness under conditions of mental stress

In 2 experiments, the effects of mental stress on limb stiffness were investigated. The relative contribution to arm stiffness of individual muscle activity, co-contraction, muscle reflexes, and postural adjustments were examined. In each experiment, participants (N = 24, Experiment 1; N = 16, Experiment 2) held their supinated hand under a tray that they were required to return to horizontal after it had been suddenly released. Electromyographic activity in the biceps and triceps muscles was recorded, as were elbow and wrist angles and tray displacement. In Experiment 1, mental arithmetic stress was shown to lead to decreased tray displacement (i.e., increased resistance) compared with displacements under the control, unstressed condition, as well as to increased elbow flexion before tray release. In Experiment 2, the increased resistance to perturbation caused by mental stress was found to be independent of initial elbow angle, but to vary as a function of the amount of upward force exerted before tray release. The authors conclude that stress-induced increases in limb stiffness result from changes in the initial position of the elbow, specified by its angle, together with the initial force exerted by participants to counteract the mechanical perturbations.     

Size-dependent interaction between a screw dislocation and an inhomogeneity of arbitrary shape in an applied stress field

We present a general approximate solution for a screw dislocation interacting with an inhomogeneity of arbitrary shape in an applied stress field. The analysis is based on the Eshelby inhomogeneity theory. As special cases, explicit solutions for some common inhomogeneity shapes are obtained, from which size-dependent effects of dislocation stress field and the applied stress field on the interaction can be identified.