Long-term metastability of light-induced defects in hydrogenated amorphous silicon

The decay of the peak intensity of the electron spin resonance signal associated with light-induced dangling bonds in a-Si(H) has been measured at room temperature as a function of time during very long intervals such as 3400 days after the intense pulsed illumination was turned off. The decay curve is fitted by an exponential function with a decay constant of 393 days and reaches a steady-state value smaller than the value taken before illumination. Such a long-term metastability of light-induced dangling bonds in a-Si:H is discussed in terms of reconstruction of the amorphous network occurring through hydrogen motion.     

A new orthorhombic approximant of the icosahedral Al–Cu–Fe quasicrystal

We report on the formation of a new crystalline approximant phase of the icosahedral (i-)Al–Cu–Fe quasicrystal. This phase is formed during sintering of Al-based composites reinforced with i-AlCuFeB quasicrystalline particles. The structure of this phase has been characterized by transmission electron microscopy (TEM) and high-resolution electron microscopy (HREM). TEM revealed that it is a B-centred orthorhombic phase with lattice parameters a = 1.166 nm, b = 1.195 nm and c = 3.44 nm. Its chemical composition, as determined by electron energy loss spectroscopy (EELS), is close to Al_76.9Cu_2.7Fe_20.4, with an average number of valence electrons per atom e/a of 1.92, similar to the value in all other approximants of the i-phase discovered thus far. Initial results on local atomic arrangements along one of its pseudo-5-fold axes are also presented.     

Kinetics of persistent photoconductivity in crystalline III–V semiconductors

Although persistent photocurrent (PPC) in photoconductive III–V semiconductors is known to be dominated by dispersive reaction kinetics, which produce a stretched exponential function decay, exp[?(t/τ)^β], where τ is the effective reaction time and β (<1.0) is the dispersion parameter, the reason for the occurrence of the PPC is still not clear. Here, we discuss the origin of dispersive kinetic relaxation associated with a DX-like centre, i.e. deep levels associated with donors in III–V semiconductors. It is suggested that lattice relaxation of DX-like centres, accompanied by multi-phonon processes, may play a role in the dispersive nature of the PPC.     

Shear-horizontal surface waves in a half-space of piezoelectric semiconductors

We study the propagation of shear-horizontal waves near the surface of a piezoelectric semiconductor half-space of crystals of class 6 mm with the presence of a biasing electric field in the propagation direction. The three-dimensional equations of linear piezoelectric semiconductors are used. A transcendental equation that determines the dispersion relation is obtained and solved numerically. Results show that the semiconduction affects the wave speed and causes wave dispersion as well as attenuation, and that the waves can be amplified by the biasing electric field.     

Experimental observation of the dislocation walls in heterostructures with two interfaces: Ge/Ge0.5Si0.5 10 nm/Si(001) as an example

High-resolution electron microscopy (HREM) at the atomic scale has been applied to study the edge dislocation redistribution between interfaces in Ge/Ge_0.5Si_0.5/Si(0?0?1) heterostructures. Our results provide a direct explanation that plastic relaxation of the GeSi buffer layer proceeds owing to motion of Lomer-type dislocation complexes consisting of a pair of complementary 60° dislocations with the ends of the {1?1?1} extra planes being located at a distance of ~2–12 interplanar spacings from each other. It is demonstrated that edge dislocations belonging to the upper and lower interfaces become arranged one under the other and dislocation walls are formed. The distributions of tension and compression in the [0?0?1] direction between two edge dislocations, obtained by processing the HREM image, testify to superposition of strain fields.     

Structure of twins in GaAs nanowires grown by the vapour–liquid–solid process

Semiconducting crystalline materials that are poor conductors of heat are important as thermoelectric materials and for technological applications involving thermal management. A combination of neutron scattering, lowtemperature ultrasonic attenuation and thermal conductivity measurements are reported on single crystals of the semiconductors Sr₈Ga₁₆Ge₃₀ and Ba₈Ga₁₆Ge₃₀. Taken together, these measurements suggest specific structural features that result in a crystal with the lowest possible thermal conductivity, namely that of a glass with the same chemical composition. Weakly bound atoms that 'rattle' within oversized atomic cages in a crystal result in a low thermal conductivity, but the present data show that both 'rattling' atoms and tunnelling states are necessary to produce a true glass-like thermal conductivity.