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1.
Abstract

Transmission electron microscope observations have been made of dislocations in Ga0·7Al0·3As after indentation of (001) surfaces at room temperature. Using two-beam imaging, in bright-field and weak-beam imaging, dissociated dislocations with extended stacking faults were observed both in the [110] and [110] directions. This is different from GaAs in which dissociated dislocations are seen in only one of these directions. These results are compared with published work on indented GaAs and considered in the light of possible mechanisms.  相似文献   

2.
Abstract

The rôle of dislocations with Burgers vectors, b, given by b = [0001] during deformation of samples of the intermetallic compound Ti3Al has been assessed. At room temperature, the experimental evidence is consistent with these dislocations being sessile, their density and morphology being similar to that in undeformed samples. In samples deformed at 650°C and above, it is concluded that motion of these dislocations is effected by dislocation climb. The line directions of the various segments of dislocations with b= [0001] are shown to be perpendicular to planes that contain sheets of Ti atoms, with an expected tendency to exhibit a high Peierls stress.  相似文献   

3.
A thorough TEM analysis has been carried out to study the dislocations cutting into γ′ phase in a single-crystal superalloy during uniaxial tensile creep under high-temperature and low-stress conditions. It is proved that the a〈100〉 edge superdislocation originates from the interfacial a〈100〉 dislocations and moves into the γ′ phase by pure climbing. And the dissociation of the a〈100〉 superdislocation core into two a/2〈101〉 superpartial dislocations during uniaxial tensile creep has been identified by HRTEM method for the first time.  相似文献   

4.
Defects in highly nitrogen-doped 4H-SiC deformed by cantilever bending at 550°C have been identified by weak-beam and high-resolution transmission electron microscopy techniques. The induced-defects consist of double stacking faults (DSFs) whose expansion produces a local 4H?→?3C phase transformation. Each DSF is bound by two identical 30° Si(g) partial dislocations which glide on two adjacent basal planes. The DSFs belong to three different populations which differ by their extension as a function of the applied-stress and the 30° Si(g) characteristics (line direction L , Burgers vector b , glide planes and glide direction). The external mechanical stresses are the main driving forces involved in the DSF expansion. However, extra driving forces such as thermodynamic or electronic forces are also likely to be involved.  相似文献   

5.

Two mechanisms are conjectured for the non-diffusional refinement of prismatic dislocation loops. These mechanisms offer an alternative to the widely accepted concept of spontaneous disintegration below some critical dipole height. In one, a loop array is refined by reaction with a mobile dislocation having the same Burgers vector. Loop shrinkage then depends on the geometry of the array and on the position of the plane of incidence. In principle, any loop array can be refined via this mechanism provided that all the loops have the same sign. An alternative mechanism may take place in dense walls formed of randomly arranged dipolar loops of both signs. As the wall is densified by impacting dislocations that push pre-existing loops on their glide prism against each other, refinement occurs conservatively when two loops of opposite sign come into contact.  相似文献   

6.

This letter is based on recent progress in the observation of dislocation distributions around nanoindentations by chemical etching. This so-called nanoetching technique is used to determine the dislocation mechanisms associated with the pop-in phenomenon in MgO and LiF. Successive stages of highly controlled chemomechanical polishing have revealed that these dislocations are half-loops lying in the classical slip systems of MgO or LiF. However, they do not extend on the surface in the classical rosette-arms pattern but stay concentrated around the imprint. A mechanism of dislocation interactions, enhanced by the fact that the dislocations are suddenly nucleated in a small volume, is proposed to explain this specific distribution.  相似文献   

7.
Abstract

The study of the mechanisms of formation of misfit dislocations in latticemismatched semiconductor interfaces requires a comprehensive characterization of these dislocations. In particular the determination of the sense of their Burgers vectors by transmission electron microscopy makes it possible to show that they contribute to removing part of the mismatched-induced interfacial strain. Furthermore the nature (αorβ) of the dislocations can then be determined. The different methods of determination of the sense of Burgers vectors are reviewed and then applied to InGaAs/GaAs superlattices.  相似文献   

8.
There is a growing consensus that materials become stronger in small volumes and in the presence of large strain gradients. It has not been clear whether this is due to increased resistance to the motion of dislocations, fewer dislocations, or increased difficulty of multiplying dislocations in these situations. A classic experiment by Stölken and Evans (J.S. Stölken and A.G. Evans, Acta metall. 46 5109 (1998)) showed that thin nickel foils under bending display increased strengthening at large plastic strain values and, correspondingly, large plastic strain gradients. We have adapted their technique to small strains, and report preliminary data for the stress–strain curves of thin nickel foils through the elastic–plastic transition. These data show unambiguously that the yield strength is greater in the thinner foils. The strengthening is additive to the Hall–Petch effect, and is consistent with a size effect at the onset of plastic deformation.  相似文献   

9.
Abstract

Two unexpected features have been revealed by transmission electron microscopy investigations of deformed silicon bicrystals: (a) slip of a/2 〈110〉 dislocations on {001} planes and (b) non-dissociation of Lomer–Cottrell dislocations formed by intersecting slip dislocations.  相似文献   

10.

The formation of an amorphous phase underneath a Vickers indentation produced on a Si(001) surface at room temperature has been observed by cross-sectional transmission electron microscopy. Two types of location are observed for the amorphous phase. One is formed just underneath the image of the indentation and the other is parallel to the slip planes of Si. It is concluded that the latter type, at least, is formed as a result of activation of dislocations which is induced by an external shear stress combined with a hydrostatic pressure.  相似文献   

11.

A three-dimensional multidislocation system in a polycrystal under applied stress is treated as a particular case of the phase field microelasticity theory of multivariant stress-induced martensitic transformations in polycrystals. This approach reduces the problem of the evolution of a dislocation system to a solution of the nonlinear integrodifferential Ginzburg-Landau equation. In this formalism, the elastic interaction between dislocations and the elastic coupling between grains are taken into consideration through exact analytical solution of the elasticity problem. The dislocation reactions, such as multiplication and annihilation, are taken into account automatically. The dislocations are 'free' to choose the optimal evolution path. Examples of three-dimensional computer simulations are considered.  相似文献   

12.

The Burgers vector of very close intrinsic dislocations in a near-Σ = 11,{311} grain-boundary in nickel is identified using a geometrical method based on local and accurate measurements of the angular deviation from perfect coincidence Σ = 11 by large-angle convergent-beam electron diffraction and of the dislocation spacing from weak-beam images of the grain boundary.  相似文献   

13.
The Burgers vectors of the so-called threading screw dislocations (a total of 28 dislocations) in 4H-SiC were determined by large-angle convergent-beam electron diffraction. A new type of TSD, that is, b = c + 2a dislocation, was identified. Thus, all of the four types of TSD predicted by Onda et al. [Phil. Mag. Lett. 93 (2013) p.591] were identified.  相似文献   

14.
ObjectivesWe compared the spatial concepts given to sounds' directions by blind football players with both blind non-athletes and sighted individuals.MethodParticipants verbally described the directions of sounds around them by using predefined spatial concept labels, under two blocked conditions: 1) facing front, 2) pointing with the hand towards the stimulus.ResultsBlind football players categorized the directions more precisely (i.e., they used simple labels for describing the cardinal directions and combined labels for the intermediate ones) than the other groups, and their categorization was less sensitive to the response conditions than blind non-athletes. Sighted participants' categorization was similar to previous studies, in which the front and back regions were generally more precisely described than the sides, where simple labels were often used for describing directions around the absolute left and right.ConclusionsThe differences in conceptual categorization of sound directions are a) in sighted individuals, influenced by the representation of the visual space b) in blind individuals, influenced by the level of expertise in action and locomotion based on non-visual information, which can be increased by auditive stimulation provided by blind football training.  相似文献   

15.
Abstract

Regular dislocation walls, where dislocations are spaced equally along the wall direction, are a popular idealization for modelling the arrangement and interactions of excess dislocations in plastic deformation. The assumption of regular walls is motivated by the fact that such walls represent minimum energy arrangements for dislocations of the same sign, and it allows to use the analytically known short-ranged stress fields of such walls for analyzing the structure of plastic boundary layers. In order to critically evaluate the physical robustness of models based on regular walls, we investigate their random counterparts and demonstrate that the energetics and interactions of such non-periodic dislocation arrangements differ completely from the periodic wall arrangements. Implications of our results for the modelling of plastic boundary layers and dislocation-grain boundary interactions are discussed.  相似文献   

16.

Generalized stacking-fault energies for the basal plane of graphite are calculated from first principles for slip along two high-symmetry directions. The rhombohedral fault energy compares well with experiment and the anisotropy in behaviour is consistent with observed dislocation network geometry. Utilizing these calculated fault energies within a modified Peierls-Nabarro model, we estimate the barrier for basal dislocation motion based on lattice friction. This is found to be extremely small, from which we conclude that dislocation network interaction and pinning, rather than the Peierls barrier, must determine the practical shear strength of graphite. However, at low dislocation densities or over small crystallite regions, the shear strength should tend to this lower limit. We discuss the relevance of this to the mechanism of lubrication.  相似文献   

17.
Abstract

The cathodoluminescence mode in the scanning electron microscope has been used to image bands of dislocations in zinc oxide. It has been shown that dislocations lying on pyramidal, {1012}, planes are generated beneath indentations on {0001} surfaces. Basal plane dislocations lying parallel to the surface are also observed. Indentations on {1100} prismatic surfaces result in slip on {0001} and {0110} planes.  相似文献   

18.
Abstract

When spinel is deformed in compression at 400°C along 〈110〉, the primary slip plane is found to be {111} with cross-slip occurring on a {001} plane. A comparison of weak-beam images of dislocations from both systems indicates that all dislocations which belong to the primary slip plane are dissociated out of the {111} plane independent of the character of the dislocation. It is proposed that deformation occurs by motion of dislocations in their dissociated state and that the partial dislocations actually glide on parallel glide planes. Movement of these dissociated dislocations is then accompanied by a concurrent migration of the stacking fault which takes place by a local shuffling of the cations. A stacking fault energy for conservative dissociation at 400°C on {001} of 530±90mJ m?2 has been determined from weak-beam images of screw dislocations.  相似文献   

19.
Abstract

We derive, in a density-wave framework, the ‘invisibility condition’ for dislocations in quasicrystals. Our results should be essential for a correct analysis of dislocations in these systems, in particular for measuring their six-dimensional Burgers vectors.  相似文献   

20.
Abstract

The identity of dislocations which contribute to plastic deformation of polycrystalline MoSi2 when compressed at 1400°C has been determined using transmission electron microscopy. It has been confirmed that dislocations with Burgers vectors lying parallel to ? 100 ? and ? 111 ? are activated in response to the applied stress. In addition, the deformation microstructure is characterized by the presence of networks containing dislocations with Burgers vectors parallel to ? 100], ? 110] and ? 111 ?. It has been shown that dislocations with Burgers vectors lying parallel to ? 111 ? are dissociated. A simple explanation has been developed to account for the occurrence of dissociation of particular dislocations, and on the basis of this model the dissociation is represented by

½? 111 ?→ ½? 111 ?+SISF+¼? 111 ?

where SISF stands for a superlattice intrinsic stacking fault. The SISF energy has been estimated from the separation of the partial dislocations to be about 261 mJ m?2. Other observations of the dissociation of dislocations in MoSi2 have been interpreted in terms of the model developed in the present work.  相似文献   

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