Screw dislocation in functionally graded magnetoelectroelastic solids

A screw dislocation in a functionally graded magnetoelectroelastic material is investigated. The material properties exponentially changing along both x and y directions are considered and the mechanical–electric–magnetic coupling is discussed. Closed-form expressions for the mechanical, electric and magnetic components are derived using the general stress function method. The solutions can be applied as a fundamental result and reduced into the classic and piezoelectric cases. The study puts forth a direct way for screw dislocation analysis in inhomogeneous structures with multifield coupling.     

Dynamic balance between grain refinement and grain growth during high-pressure torsion of Cu powders

High-pressure torsion (HPT) was applied to unmilled coarse-grained (CG) Cu powders with low initial dislocation density and cryomilled nanocrystalline (nc) Cu powders with high initial dislocation density, with identical processing parameters. HPT of unmilled CG Cu powders resulted in exceptional grain refinement and increase in dislocation density, whereas significant grain growth and decrease in dislocation density occurred during HPT of cryomilled nc Cu powders. Equilibrium structures were achieved under both conditions, with very similar stable grain sizes and dislocation densities, suggesting dynamic balances between deformation-induced grain refinement and grain growth, and between deformation-induced dislocation accumulation and dislocation annihilation. The equilibrium structures are governed by these two dynamic balances.     

Negative,zero and positive stiffness in extended Eshelby plates

Structures under loading can show positive and negative stiffness (during buckling) with zero stiffness just being one point of transition. Material structures with extended zero stiffness regimes have also been reported. Using the example of an extended Eshelby plate with a positive and negative edge dislocation, we show the existence of finite regimes of positive, zero and negative stiffness in a single system. Given that stable states/configurations of negative stiffness cannot exist in an isolated system; we show the existence of metastable states of negative stiffness along with unstable states of positive stiffness. The system also exhibits one point of unstable equilibrium.     

Atomistic calculation of the interaction between an edge dislocation and a free surface

By using molecular statics, we compute the variation in the excess energy associated with the gradual approach of an edge dislocation towards the free surface of a crystal. The calculations rely on a phenomenological potential adapted to aluminium and an appropriate constraint procedure that allows investigations of both the extended and the perfect configurations of the dislocation core. Thereby, an estimation of the energy required for the introduction of a dislocation in a thin film is obtained.     

Dynamic properties of edge dislocations decorated by interstitial loops in α-iron and copper

Clusters of self-interstitial atoms (SIAs) in the form of parallel crowdions are created directly in high-energy displacement cascades produced in metals by neutron irradiation. They are equivalent to small perfect dislocation loops and, in isolation in pure metals, undergo fast thermally-activated glide in the direction of their Burgers vector. Their strain field and ability to glide allows long-range interaction with other extended defects. Indeed, dislocations decorated by dislocation loops are commonly observed after neutron irradiation. Dislocations gliding under applied stress also encounter these mobile defects. These effects influence mechanical properties and require further investigation. This paper presents results from an atomic-scale study of copper and α-iron at either 0?K or 300?K. Loop drag and breakaway effects are investigated for an edge dislocation under applied stress interacting with a row of SIA loops below its glide plane. The maximum speed at which a loop is dragged is lower in copper than iron, and the applied stress at which this occurs is also lower. These differences in the dynamics of cluster-dislocation interaction are determined by the atomic structure of the defects and cannot be investigated by continuum treatment.     

The atomic structure of the dislocation cores in a small-angle grain boundary in BaTiO3 thin films

The atomic structure of the cores of the dislocations forming a [110] tilt boundary of 10^o misorientation in a BaTiO₃ film is characterized by means of focal-series reconstruction. Along the small-angle grain boundary, facets with different inclinations are accompanied by different types of dislocation. The dislocation with a Burgers vector of a [001] appears as a perfect edge type. Those with a Burgers vector of a [111] are dissociated into three partials with a Burgers vector of (a/3)[111], leading to two segments of stacking faults. Structural models of these dislocation cores are suggested on the basis of the phase of the reconstructed wavefunction and tested by simulation of the wavefunction.     

Dislocation core structures in GaN grown on Si(111) substrate

The Ga-N bond extension and compression at the cores of different types of dislocation in hexagonal GaN films grown on Si(111) substrates have been studied by high-resolution transmission electron microscopy. The relative bond extension and compression are about 6 4 and 7 4% respectively around the cores of mixed dislocations and about 9 6 and 12 7% respectively around the cores of pure edge dislocations. The core structure of a pure edge dislocation is an eightfold atom-column ring.     

Experimental observation of the dislocation walls in heterostructures with two interfaces: Ge/Ge0.5Si0.5 10 nm/Si(001) as an example

High-resolution electron microscopy (HREM) at the atomic scale has been applied to study the edge dislocation redistribution between interfaces in Ge/Ge_0.5Si_0.5/Si(0?0?1) heterostructures. Our results provide a direct explanation that plastic relaxation of the GeSi buffer layer proceeds owing to motion of Lomer-type dislocation complexes consisting of a pair of complementary 60° dislocations with the ends of the {1?1?1} extra planes being located at a distance of ~2–12 interplanar spacings from each other. It is demonstrated that edge dislocations belonging to the upper and lower interfaces become arranged one under the other and dislocation walls are formed. The distributions of tension and compression in the [0?0?1] direction between two edge dislocations, obtained by processing the HREM image, testify to superposition of strain fields.     

Dislocation multiplication in bcc molybdenum: A dislocation dynamics simulation

Plastic deformation of Mo single crystals is examined by direct simulation of dislocation dynamics under stress. Initial dislocation populations are made to mimic real dislocation microstructures observed in transmission electron microscopy cross-sections of pure annealed Mo single crystals. No a priori sources for dislocation multiplication are introduced, and yet multiplication takes place through a sequence involving aggregation of grown-in superjogs, bowing of screw dislocation segments and fast lateral motion of edge segments, producing a large number of elongated loops and a characteristic cross-grid pattern of screw dislocations.     

Evidence of the climb motion of a Shockley partial during glide at room temperature

A dissociated dislocation introduced by compression at room temperature in a Ag-15at.%Al alloy was studied comprehensively by the weak-beam method. In addition to the two Shockley partials of the dissociated dislocation, faint contrasts were observed near the Shockley partial with pure edge orientation. Contrast experiment was carried out on the faint contrast, and we conclude that this is evidence for the interaction between an edge-orientated Shockley partial moving under the action of an applied stress and vacancies at room temperature.     

Real-space first-principles electronic structure of edge dislocations: NiAl

The electronic structure of the 100 {010} edge dislocation in NiAl has been calculated using the real-space tight-binding linear muffin-tin orbital recursion method with a self-consistent treatment of electron density redistribution effects in the dislocation core. We demonstrate that quasilocalized states may exist in this metallic system as a result of specific lattice distortions in the dislocation core with 'broken bonds'.     

The effect of electropulsing on dislocation structures in [233] coplanar double-slip-oriented fatigued copper single crystals

The effect of high-current-density electropulsing on dislocation structures in a coplanar double-slip-oriented copper single crystal that had previously been fatigued is reported. The results show that, after electropulsing, vein structures are transformed to cell structures with some dark regions. It is proposed that the thermal compressive stress caused by electropulsing activates a coplanar slip system and leads to strong dislocation interactions between primary and coplanar slip systems, thereby forming cell structures. Partial recrystallization may occur by electropulsing, leading to the appearance of some dark regions.     

Long-term natural ageing of a dissociated dislocation in a Cu-13.43 at.% Al alloy

The nature of impurity-dislocation interactions is one of the key questions governing the strength and plasticity of solid-solution materials. To investigate the influence of impurities on the mechanical properties of intermetallic NiAl, the electronic structure and energy of NiAl with a <100>{010} edge dislocation and transition-metal impurities was calculated using the real-space tight-binding linear muffin-tin orbital method. The localized electronic states, appearing in the core of the dislocation, are found to lead to strong impurity-dislocation interactions via two mechanisms: firstly, chemical locking, due to strong hybridization between impurity electronic states and dislocation localized states; secondly, electrostatic locking, due to long-range charge oscillations caused by the electron localization in the dislocation core. The results obtained explain qualitatively why the solid-solution hardening effect in NiAl correlates with the electronic structure of impurities rather than with size misfit, as expected according to traditional views.     

The fatigue limits of copper single crystals cyclically deformed at constant plastic strain amplitudes

Based on systematic surface observations, experimental measurements on the fatigue limits of differently oriented copper single crystals cyclically deformed at constant plastic strain amplitudes are summarized, and an orientation dependence of the fatigue limit is sketched. It was found that the fatigue limits of crystals depend mainly upon the low-strain-amplitude dislocation structures, which are characteristic of the particular crystal orientations. When multiple-slip deformation is the main mode of deformation and ultimately produces stable lowenergy dislocation structures such as labyrinth and cell structures, the fatigue limit can be improved notably.     

Analytic model for the line tension of a bowing dislocation segment

The resistance of a dislocation to bowing under stress governs the strength of the gamut of metallic material systems. This resistance is commonly referred to as the dislocation line tension (Γ) and is employed ubiquitously within continuum scale models of metal plasticity. Despite its significance, a unifying model for the line tension of a bowing dislocation segment, which has been analytically derived and independently reproduces simulation results, remains lacking. Here, we report a model for Γ of a curved, semicircular bowing dislocation segment. Upon applying our model to the operative stress of a Frank–Read dislocation source, we predict a prelogarithmic scaling of the Frank–Read source strength in agreement with existing simulation results. Moreover, in the limit of infinitesimal bowout we predict a prelogarithmic line tension factor which also agrees with theoretical analyses. Our model provides insight into the evolution of an arbitrarily oriented, stressed dislocation segment without resorting to numerical methods.     

Effect of film thickness and grain size on fatigue-induced dislocation structures in Cu thin films

This letter presents systematic experimental observations of fatigue damage and corresponding dislocation structures in thin Cu films as a function of film thickness made using transmission electron microscopy and focused-ion-beam microscopy. It is found that, in thick films and grains of at least 3.0 μm diameter, coarse surface extrusions and dislocation wall and cell structures occur whereas, in thin films or in small-diameter grains, finer extrusions occur but no clearly defined dislocation structures are present. This minimum required dimension of 3.0 μm for fatigue damage formation may be caused by constrained dislocation motion in small dimensions.     

Investigation of jog motion in γ-TiAl via molecular dynamics

The elastic displacement field of a jogged screw dislocation is obtained analytically from Burgers equation. With this analytic solution, a pair of jogs in a screw dislocation is implemented into molecular-dynamics simulations. The dislocation line bows out between two jog pinning points and breaks away when the line tension of the dislocation exceeds a certain critical value. The creation of vacancies and interstitials is observed during the non-conservative motion of the jogged screw dislocation in γ-TiAl. The structures of vacancies and interstitials are discussed.     

Quantification of dislocation structures at high resolution by atomic force microscopy of dislocation etch pits

Atomic force microscopy of dislocation etch pit structures is a convenient means of characterising the dislocation structure in etchable materials at high resolution for dislocation spacing extending down to 25 nm . This is demonstrated for single crystals of CaF₂. The local deformation zone generated around nanoindents at ambient temperature and the low-angle boundaries generated in the bulk during uniaxial compression at elevated temperatures are presented as examples.     

A moving screw dislocation in transversely isotropic magnetoelectroelastic materials

The study of dislocations is of great interest for understanding the strengthening and hardening mechanisms in materials. A magnetoelectroelastic material containing a moving screw dislocation is considered using an extended version of the Stroth formalism. A complex-variable method is applied to obtain closed-form solutions. The present solutions, which contain previously known results as special cases, may be of great help in analyzing the reliability of devices made from these advanced materials.     

Structural duality of 1/3⟨111⟩ twin-boundary disconnections

We investigate the structure of 1/3?111? disconnections at Σ3 {111} twin boundaries in gold. Our high-resolution transmission electron microscopy (HREM) observations and atomistic simulations show that the core relaxation of this defect is dramatically affected by reversing the sign of the Burgers vector, as oriented with respect to the twin boundary. In particular, we find two distinct, relaxed structures: one with a localized core and the other with a dissociated core composed of a stacking fault terminated by a Shockley partial dislocation. An analysis of the specific pathways available for the defect to relax and of the elastic interactions of the components of the dissociated dislocation for these cases explains the structural difference.