Low-energy boron implants into silicon: A molecular dynamics simulation study of implants into a stepped surface

Molecular dynamics simulations have been conducted to study implantation of boron with a low kinetic energy (E _k in the range 5 eV) into the silicon surface. The bombarded surface has a realistic stepped structure and the geometry of the step edge is taken from the theory of Chadi (1987, Phys. Rev. Lett., 59, 1691). It is found that reflection is the more common event. However subsurface implants and adatom formations are also observed. The effect of the step morphology is important and different trajectories are observed if the ions hit steps of different shapes.     

Dynamic precipitation at elevated temperatures in a dual-phase AlCoCrFeNi high-entropy alloy: an in situ study

ABSTRACT

The effect of a possible phase transformation or precipitation of the face-centred cubic (FCC) phase on intermediate-temperature deformation of a dual-phase AlCoCrFeNi high-entropy alloy has been studied using in situ tensile testing at 550°C. Electron backscatter diffraction (EBSD) results showed localised precipitation of the FCC phase during the intermediate-temperature deformation. The overall fracture behaviour and crack propagation of the material was not altered much compared to the room-temperature behaviour, namely brittle trans-granular fracture. Deformation at higher temperatures (above 750°C) is suggested as a way to enhance the dynamic FCC phase precipitation, in order to improve the ductility or deformability of the alloy.