Long-term metastability of light-induced defects in hydrogenated amorphous silicon

The decay of the peak intensity of the electron spin resonance signal associated with light-induced dangling bonds in a-Si(H) has been measured at room temperature as a function of time during very long intervals such as 3400 days after the intense pulsed illumination was turned off. The decay curve is fitted by an exponential function with a decay constant of 393 days and reaches a steady-state value smaller than the value taken before illumination. Such a long-term metastability of light-induced dangling bonds in a-Si:H is discussed in terms of reconstruction of the amorphous network occurring through hydrogen motion.     

Solid-source doping of hydrogenated amorphous silicon

Abstract

Arsenic doping of hydrogenated amorphous silicon (a-Si: H) from a solid source in a remote hydrogen plasma reactor is reported. Arsenic incorporation in the deposited films was directly demonstrated with secondary-ion mass spectrometry, and doping efficiency was determined from d.c. conductivity. The electronic properties of the doped films were indistinguishable from those of conventional r.f. glow discharge deposited a-Si:H. The technique should be applicable to other dopant and alloying elements     

An explanation for the low-temperature H evolution peak in hydrogenated amorphous silicon films deposited 'on the edge of crystallinity'

The puzzling existence of a sharp low-temperature (T = 400°C) H evolution peak in compact hydrogenated amorphous silicon (a-Si : H) films deposited 'on the edge of crystallinity' is examined. From infrared absorption and X-ray diffraction (XRD) measurements, we show that none of the standard methods used to explain the existence of this peak in a-Si : H materials is applicable to the present films. From the Si-H wag-mode peak frequency, we postulate the existence of very small Si crystallites contained within the amorphous matrix. While the crystallite volume fraction is too small to be detected by XRD in the as-grown films, crystallization is observed for this material at anneal temperatures as low as 500°C. It is proposed that these crystallites catalyse the crystallization of the remainder of the amorphous matrix upon moderate annealing, enabling H surface desorption and H₂ out-diffusion to the sample surface along newly formed grain boundaries at low anneal temperatures.     

Cascade effects on the irradiation stability of amorphous SiOC

We studied the heavy ion radiation tolerance of amorphous silicon oxycarbide (SiOC) alloys by in situ Kr ion irradiation within a transmission electron microscopy. The amorphous SiOC thin films were grown via co-sputtering from SiO₂ and SiC targets on a surface-oxidized Si (100) substrate. These films were irradiated by 1 MeV Kr ions at both room temperature and 300 °C with damage levels up to 5 displacements per atom (dpa). TEM characterization shows no sign of crystallization, void formation or segregation in all irradiated samples. Our findings suggest that SiOC alloys are a class of promising radiation tolerant materials.     

Determination of the midgap density of states and capture cross-sections in polymorphous silicon by space-charge-limited conductivity and relaxation

A new type of material consisting of an amorphous silicon matrix, in which silicon nanoparticules are embedded, has recently been obtained. This material, named polymorphous silicon (pm-Si), exhibits enhanced transport and stability properties with respect to hydrogenated amorphous silicon (a-Si:H). In order to progress in the understanding of such improved properties, we combine space-charge-limited current and space-charge relaxation measurements which allow us to show that the density of states at the Fermi level and their capture cross sections in pm-Si are at least ten times and five times lower respectively than in a-Si:H. This is in good agreement with photoconductivity results.     

Modelling of dissolution kinetics of thin amorphous chalcogenide films

A theoretical relationship for the dissolution kinetics of thin chalcogenide films is proposed. The influence of light irradiation on the film dissolution is taken into account. The theoretical curves are in good agreement with the experimental dissolution results obtained for As₂S₃ thin amorphous films.     

Dependence of the persistent photoconductivity in doping-modulated a-Si: H multilayers on the exposure temperature

Abstract

We find that the photo-induced excess conductivity (persistent photoconductivity, PPC) in doping-modulated hydrogenated amorphous silicon (a-Si: H) is thermally activated for exposure temperatures above 220 K in agreement with Kakalios and with Hundhausen and Ley. However, we find a temperature regime between 80 and 220 Kin which the PPC measured at 300 K is independent of excitation temperature. Whether the PPC is excited in the thermally activated regime above 220 K or in the temperature-independent regime, the annealing occurs at 410 K. The pre-exponential factor and the activation energy of PPC are related by the Meyer-Neldel rule independent of the excitation temperature.     

High-resolution electron microscope studies of irradiation-induced crystalline-to-amorphous transition in boron carbide

Abstract

The crystalline-to-amorphous (C-A) transition in boron carbide induced by 2 MeV electron irradiation was studied by high-resolution electron microscopy. It is revealed that the C-A transition takes place not homogeneously but heterogeneously over the irradiated volume and the volume fraction of the amorphous phase continuously increases with increasing dose of electrons.     

Distribution of the midgap density of states and their capture cross-sections in hydrogenated amorphous silicon deduced from space-charge-limited conduction in the dark and under illumination

Space-charge-limited current measurements in the dark and under illumination offer the means of obtaining the density of states N(E) and their capture cross-sections s(E) in a range of energy E above the equilibrium Fermi level in hydrogenated amorphous silicon (a-Si:H) n⁺–i–n⁺ structures. N(E) and s(E) have been measured in the energy region from 0.65 to 0.5?eV below the conduction-band edge E _c. The decrease on s(E) observed as the energy E increases agrees with recent observations and is attributed to the coexistence of two types of defect having different capture cross-sections. This is confirmed by light soaking of a-Si:H which makes the defects with high s(E) predominant.     

Electrical properties and local structure of n-type conducting amorphous indium sulphide

An n-type amorphous chalcogenide, In₄₉S₅₁, having a band gap of 1.9eV, has been found. The conductivity in as-prepared films was ～10^?4?S?cm^?1, which increased to 1?×?10^?1?S?cm^?1 on post-annealing at 125°C in vacuum, accompanied by a reduction in the sulphur content of the films. TEM observations showed the amorphous nature of the films before and after annealing. Both Seebeck and Hall coefficients are negative, indicating that the major carriers are electrons. The Hall mobility can be as large as 26?cm²?V^?1?s^?1 at 300?K. No significant changes to the optical absorption were observed upon annealing. Analysis of the X-ray radial distribution function reveals that the sulphur atoms have four-fold coordination, making the structure more rigid than conventional amorphous chalcogenides in which the chalcogen is alloyed to elements of group IV or V of the periodic table. We tentatively associate the electron carrier generation with the formation of sulphur vacancies.     

Investigation of the interaction of He and D in FeBSi alloy

He and H can be produced by nuclear reaction. In addition, energetic particles of He and T and D, which are isotopes of H, in the plasma of fusion reactor induce the damage in the surface of materials, such as erosion, sputtering and blistering. To investigate the interaction of He and D, amorphous and crystalline FeBSi alloys were irradiated by He or D₂ or He?+?D₂ ions with 5?keV. The results of thermal desorption indicated that more He atoms were trapped in both the amorphous and crystalline alloy irradiated by He ions than D atoms in those alloys irradiated by D₂ ions. Although He and D atoms were trapped in FeBSi alloy irradiated by He?+?D₂ ions, desorption peaks of D₂ and He were separated. Absorption of D in an amorphous alloy was influenced by the presence of He; however, absorption of He was independent of D₂ irradiation in both alloys.     

Solid-phase epitaxy of implanted silicon at liquid nitrogen and room temperature induced by electron irradiation in the electron microscope

Abstract

Electron-beam-induced solid-phase epitaxy (SPE) has been obtained on cross-sections of implanted Si layers, by in situ irradiation in the electron microscope, with electrons of energies of 200, 250 and 300 keV, at both room and liquid-nitrogen temperature. The, absence of a transition from SPE to layer-by-layer amorphization (which is observed during ion-beam irradiation on decreasing the temperature below a certain critical value) and the athemal nature of the electron-induced crystallization process below room temperature, indicate that, although elastic displacement is the basic mechanism of both processes, the models which describe ion-beam-induced epitaxy in the temperature range 200≤T≤400°C cannot be extrapolated to explain the results of electron irradiation below room temperature.     

Nucleation of He bubbles in amorphous FeBSi alloy irradiated with He ions

It is interesting to investigate the formation of He bubbles in amorphous alloys because point defects do not exist in amorphous materials. In the present study, the microstructural evolution of amorphous Fe₇₉B₁₆Si₅ alloy, either irradiated with 5?keV He⁺ ions or implanted with 150?eV He⁺ ions without causing displacement damage, and then annealed at a high temperature, was investigated using transmission electron microscopy (TEM). Vacancy-type defects were formed in the amorphous alloy after irradiation with 5?keV He⁺ ions, and He bubbles formed during annealing the irradiated samples at high temperature. On the other hand, for samples implanted with 150?eV He⁺ ions, although He atoms are also trapped in the free volume, no He bubbles were observed during annealing the samples even up to 873?K. In conclusion, the formation of He bubbles is related to the formation and migration of vacancy-type defects even in amorphous alloys.     

Retention and thermal desorption of helium in amorphous and crystalline FeBSi alloys

Helium retention in metals is related to their atomic structure and the type of defects they contain. In order to investigate the dependence of helium retention on structure, amorphous Fe₇₉B₁₆Si₅ and crystalline FeBSi alloys were irradiated by helium ions at room temperature. In the crystalline alloy irradiated with 5 keV He⁺ ions, three types of helium trapping sites were found: surface defects produced by the irradiation, interstitial-type dislocation loops, and voids. Although these defects did not exist in the amorphous FeBSi alloy, we did observe thermal desorption peaks related to all three types. In addition, helium was released during the crystallization of amorphous FeBSi that had been irradiated by He⁺ ions.     

The effect of hydrogen plasma on the properties of a-Si:H/a-Si1-xNx:H superlattices

Abstract

A hydrogen plasma introduced during the interrupting interval when alternating two gases affects the properties of a-Si:H/a-Si_1-xN_x:H superlattices resulting in the creation of fewer interface defects than the superlattices prepared without the hydrogen plasma.     

Structural changes induced by low-energy electron irradiation in GaSb

Structural changes in GaSb (001) thin films upon low-energy electron (125?keV) irradiation have been studied by in situ transmission electron microscopy. No structural changes were observed for irradiation at room temperature. However, in a sample irradiated at 473?K domains of {110} variant, rotated 90° from each other, were formed in the matrix. The average diameter of the domains was approximately 18?nm in the sample irradiated to a fluence of 4.8?×?10²⁴?electrons/m². It is considered that the domains are pseudo-{110} planes in the matrix formed by electron-irradiation-induced Shockley partial dislocations.     

Electronic transport in degenerate amorphous oxide semiconductors

The fundamental parameters associated with electronic transport, that is the scattering time, mean free path, effective mass and hence microscopic mobility for free electrons, have been estimated from the free-carrier absorption, Hall effect and dc conductivity in an optically transparent and highly conducting (degenerate) new class of amorphous oxides. No sign anomaly is observed in the Hall effect and the optical conductivity measured at room temperature obeys the classical Drude formula. The dc conductivity is proportional to temperature below room temperature, suggesting that the transport is in a weak-localization regime at these temperatures.     

In situ simultaneous measurements of photodarkening and photoinduced defect creation in amorphous As2Se3 films

To understand the direct correlation between photodarkening (PD) and photoinduced defect creation (PDC) observed in amorphous chalcogenides, in situ simultaneous measurements of PD and photocurrent (PC) have been performed on amorphous As₂Se₃ films. The time evolution of PD and PDC during light excitations are empirically described by a stretched exponential function; 1 ??exp[?(t/τ) ^β ], where τ is the effective response time and β the dispersion parameter. The value of τ for the PDC is very much smaller than that for the PD, suggesting that there is no direct correlation between the two.     

Effect of heat treatment on the NO2-sensing properties of sputter-deposited indium tin oxide thin films

Transparent conducting indium tin oxide (ITO) films were deposited onto glass substrates by radio-frequency magnetron sputtering at 648?K, under an oxygen partial pressure of 1?Pa. The effect of annealing on the electrical properties of the films was studied. Characterization of the coatings revealed an electrical resistivity below 6.5?×?10^??3?Ω?cm. The ITO films deposited at 648?K were amorphous, while the crystallinity improved after annealing at 700?K. The surface morphology examined by scanning electron microscopy appears to be uniform over the entire surface area after annealing. The NO₂-sensing properties of the ITO films were investigated and showed sensitivity at concentrations lower than 50?ppm, at a working temperature of 600?K.     

Microstructural evolution of single-walled carbon nanotubes under electron irradiation

A sample containing single-wall carbon nanotubes (SWCNTs) has been annealed at 900°C and then irradiated by high-energy electrons in an ultrahigh-vacuum transmission electron microscope. Sequential high-resolution images showed that the structures of SWCNT bundles and individual SWCNT segments first collapsed into disordered and fullerene-like carbon materials and then reorganized into graphitic particles under continuous electron irradiation. The speed of structural evolution is dependent on the flux density of the electron irradiation.