Role of cross-slipping in formation of edge dislocations in heteroepitaxial systems GeSi-on-Si(001) and Ge-on-InGaAs/GaAs

Edge misfit dislocations (MDs) formed as result of reactions between 60° glissile threading dislocations and 60° MDs lying on an intersecting glide plane were found in strained GeSi-on-Si(001) and Ge-on-InGaAs/GaAs films. It was demonstrated that dislocations penetrating from the InGaAs buffer layer to the strained Ge film can provoke formation of not only 60° MDs, but also edge MDs on the interface even at minor mismatch of the lattice parameters of the film and the InGaAs/GaAs virtual substrate.     

Stability of nanocrystalline disordered NiAl synthesized by mechanical alloying

The thermal stability of highly disordered mechanically alloyed nanocrystalline NiAl has been evaluated. The reordering of disordered NiAl(Cr) shows extremely fast kinetics on isothermal annealing at and above 673K, while the process is quite sluggish below this temperature. On the other hand, significant reordering in NiAl(Fe) takes place even at 573K. A unique dependence of reordering on the grain growth of the nanophase is evident during thermal treatment. Rapid grain coarsening begins only as the absolute temperature approaches approximately 0.4 T m, where T m is the melting point of the aluminide.     

On the asymmetrical dissociation of Lomer dislocations

Abstract

Using anisotropic elasticity theory, Korner, Schmid and Prinz have shown that Lomer-Cottrell dislocations in the f.c.c. structure have asymmetrical equilibrium positions. This is also true for the isotropic theory, but in addition it can also be demonstrated in a very simple way that the ratio of the dissociation widths on the two {111} planes is material independent. This result seems to be general even for the anisotropic case. However, careful observations of Lomer dislocations in copper by weak-beam transmission electron microscopy indicate clearly that they are not dissociated.     

Cathodoluminescence-mode imaging of dislocations in zinc oxide

Abstract

The cathodoluminescence mode in the scanning electron microscope has been used to image bands of dislocations in zinc oxide. It has been shown that dislocations lying on pyramidal, {1012}, planes are generated beneath indentations on {0001} surfaces. Basal plane dislocations lying parallel to the surface are also observed. Indentations on {1100} prismatic surfaces result in slip on {0001} and {0110} planes.     

Atomic and electronic structure of a carbon nitride compound prepared by magnetron sputtering

The atomic structure, chemical composition and chemical bonding state of a carbon nitride compound, synthesized by rf magnetron sputtering, have been studied by high-resolution electron microscopy, nanobeam diffraction and electron energy loss spectroscopy. It is revealed that the grain sizes of a crystalline compound in an amorphous matrix lie in the range 5-10 nm, and that the compound has a hexagonal structure with a = 0.324 nm and c = 0.404 nm. The C and N K edges are observed in the high-energy region of the electron-energy-loss spectrum. Only features corresponding to C sigma* bonds are found in the C K edge spectrum, which provides evidence for sp³ hybridization of C orbitals in the compound. Quantifying the electron-energy-loss spectra suggests that the compound is C₇N₁₀.     

Dipole of misfit dislocations in axially symmetric structures

The nucleation of a pair of misfit dislocations of Burgers vectors b 1 and b 2 with b 1 + b 2 = 0 has been studied for the case of an axially symmetric two-phase structure. Considering a cylindrical inclusion epitaxially stressed in a unbounded matrix, the variation in the total energy due to the formation of the dipole has first been determined as a function of the radius of the inclusion and the epitaxial stress. The conditions for nucleation of the dipole on the interface have then been investigated as a function of the ratio of the shear modulus and of the misfit stress.     

Transmission electron microscopy of dislocations in SrTiO3

Dislocations have been introduced in SrTiO₃ by Vickers indentation at room temperature and analysed by transmission electron microscopy. The slip systems in SrTiO₃ were identified as ?110?-{110}. ?110? dislocations are dissociated into two partial dislocations. The stacking-fault energy γSF was determined to be 136 ± 15 mJm^-2.     

Thermal expansion coefficients of Mo-Si compounds by first-principles calculations

Taking Mo-Si compounds as model systems, we show that the coefficients of thermal expansion (CTEs) of complex structures can be calculated precisely from first principles by incorporating the Debye model for acoustic response. Specifically, we obtain a nearly isotropic CTE in MoSi₂ but a highly anisotropic CTE in Mo₅Si₃. The CTE anisotropy in Mo₅Si₃ is due to an elastically more rigid basal plane and a higher anharmonicity along the c axis. As the structure of 5-3 compounds is modified from D8_m to D8_l by boron substitutions (Mo₅SiB₂), we predict a significant decrease in the CTE anisotropy, which is confirmed by experiments.     

On the edge: The psychoanalyst's transference1

Countertransference is a central topic in analytic work and in the literature. The concept of countertransference includes a basic question which has been understood in different ways. The author attempts to differentiate between the psychoanalyst's transference and his countertransference in the analytic process. It is hard to draw a line between them; analysts are always on the edge. The analyst's transference will be explored and described using three approaches: narcissism, regression profile and the analyst's phase of life. Regression profile is a new concept developed by the author, which may help us to understand the core of the analyst's transference in the analytic situation. She illustrates the topic by clinical vignettes.     

Interactions of in atoms with partial dislocations cores in GaAs: 0.3% In

Abstract

It has been established that dislocation mobilities in GaAs are reduced by In doping. This reduction operates mainly on defects exhibiting at least one α (As core) partial dislocation. We discuss here the different interactions between In and α partials which can occur. We propose interstitial In incorporated on dangling bonds as responsible for the observed reduction in mobility. The role of temperature and stress is also discussed.     

Mobility of c dislocations in Ti3, Al

Abstract

The rôle of dislocations with Burgers vectors, b, given by b = [0001] during deformation of samples of the intermetallic compound Ti₃Al has been assessed. At room temperature, the experimental evidence is consistent with these dislocations being sessile, their density and morphology being similar to that in undeformed samples. In samples deformed at 650°C and above, it is concluded that motion of these dislocations is effected by dislocation climb. The line directions of the various segments of dislocations with b= [0001] are shown to be perpendicular to planes that contain sheets of Ti atoms, with an expected tendency to exhibit a high Peierls stress.     

Asians on the edge: the reciprocity of allied behavior

The discussion of racial and ethnic minority issues has traditionally been a Black-White discussion. As such, American Indians, Latinos, and Asians have been left out of this discussion. Such exclusion does not make scientific sense, as it makes conclusions about race relations less generalizable. It also comes with a cost, as the excluded groups are often asked to give up their respective ethnicities to join the discussion. The present article, discusses some of these scientific and social losses and suggests that prominent African American and White leaders serve as allies for the inclusion of all groups in the discussion of race relations, focusing particularly on the Asian experience. Such allies must come not only from academicians but also from community activists and those in power positions in the media.     

Nucleation of misfit dislocations in strained-layer InGaAs on GaAs

Abstract

Austenitic 316L stainless steel alloys annealed at 550°C for 100 h present a few ferrite precipitates surrounded by a new interfacial phase, here called the I-phase, that develops at the level of the austenite/ferrite interface. The I-phase presents the typical patterns of an icosahedral quasicrystal with a primitive hypercubic lattice of parameter A = 0.63 nm. The marked orientation relationships between the I-phase and the ferrite precipitates strongly suggest that this phase results from a decomposition of the ferrite and not of the austenite. The I-phase is metastable and transforms eventually after annealing at 700°C to the stable crystalline σ-phase.     

Tensile strength and fracture of a tilt grain boundary in cubic SiC: A first-principles study

The ab initio tensile test has been applied to the non-polar interface of the {122}, Sigma = 9 tilt boundary in cubic SiC, where the tensile strength and mechanical behaviour at zero temperature are examined using the ab initio pseudopotential method based on the local density-functional theory. This interface is strong because of the reconstruction of interfacial bonds. The maximum tensile stress in the unaxial extension normal to the interface is about 42 GPa, which is about 80% of the theoretical and experimental values of the strength of bulk crystal along the <111> direction. Young's modulus and the fracture toughness are also comparable with the values of the bulk crystal. The back Si-C bond of the interfacial C-C bond is broken first because the C-C bond has a high strength and a short length like a diamond bond. Then the interfacial Si-C bonds are broken, and finally the Si-Si bond. The Si-C bonds are rapidly stretched and broken if the bond stretching exceeds about 20%, and the bond charge clearly disappears when the bond stretching exceeds about 30%. Changes in the electronic structure associated with the bond breaking are analysed.     

The edge of chaos: A nonlinear view of psychoanalytic technique

The field of nonlinear dynamics (or chaos theory) provides ways to expand concepts of psychoanalytic process that have implications for the technique of psychoanalysis. This paper describes how concepts of “the edge of chaos,” emergence, attractors, and coupled oscillators can help shape analytic technique resulting in an approach to doing analysis which is at the same time freer and more firmly based in an enlarged understanding of the ways in which psychoanalysis works than some current recommendation about technique. Illustrations from a lengthy analysis of an analysand with obsessive‐compulsive disorder show this approach in action.