Texture and grain boundary character distribution (GBCD) in rapidly solidified and annealed Fe–6·5 mass% Si ribbons

Abstract

The type and frequency of grain boundaries, the so-called grain boundary character distribution (GBCD), has been determined in rapidly solidified and subsequently annealed Fe-6·5 mass% Si alloy ribbon by the scanning electron microscopy-electron channelling pattern (SEM-ECP) technique. High frequencies of low-angle boundaries and coincidence boundaries with Σ3, Σ9, Σ11, Σ17 and Σ19 were observed in a fully annealed ribbon with well defined {110} texture. The total frequency of low-angle boundaries and coincidence boundaries is almost one-half of all grain boundaries. The coincidence boundaries which occurred more frequently are exactly those predicted theoretically from the coincidence orientations for 〈110〉 rotation in cubic crystals, similar to those observed previously in {100} textured ribbons of the same alloy produced by the same processing method. The presence of a close relationship between the type of texture and GBCD has been confirmed by experiment on differently textured ribbons of the same material.     

High-resolution in situ electron microscopy of a silicon surface modification by molten aluminium at high temperatures

High-resolution in situ heating experiments in a transmission electron microscope have been applied to a study of the surface modification of Si by molten Al in a vacuum of 1 10^-5 Pa. Transformation from an atomically rough to an atomically flat surface was induced by wetting of molten Al atoms. Si {110}, {112}, {115} and {773} surfaces show sawtooth-like structures composed of nanofacets. It is concluded that molten Al atoms remove a native amorphous oxide layer which existed on the original Si surface, making the surface 'clean' even in a non-ultra-high vacuum such as 10^-5Pa.     

On anomalous channelling effects in ion-implanted silicon

Abstract

In this work results of a Monte Carlo simulation of the ion penetration in a crystalline silicon target are reported. It is shown that, contrary to the common expectation, channelling is sustained by a non-vanishing divergency of the ion beam for a nominally random orientation of the target.     

Dissociation of dislocations in MgAl2O4 spinel deformed at low temperatures

Abstract

When spinel is deformed in compression at 400°C along 〈110〉, the primary slip plane is found to be {111} with cross-slip occurring on a {001} plane. A comparison of weak-beam images of dislocations from both systems indicates that all dislocations which belong to the primary slip plane are dissociated out of the {111} plane independent of the character of the dislocation. It is proposed that deformation occurs by motion of dislocations in their dissociated state and that the partial dislocations actually glide on parallel glide planes. Movement of these dissociated dislocations is then accompanied by a concurrent migration of the stacking fault which takes place by a local shuffling of the cations. A stacking fault energy for conservative dissociation at 400°C on {001} of 530±90mJ m^?2 has been determined from weak-beam images of screw dislocations.     

Indentation hardnesses of semiconductors and a scaling rule

The Vickers hardnesses of 15 semiconductors, namely Si, Ge, SiC, AlN, GaN, GaP, GaAs, GaSb, InP, InAs, InSb, ZnO, ZnSe, ZnTe and CdTe, have been investigated from room temperature to their melting points. The temperature dependences of the Vickers hardness H V of 11 of these semiconductors, namely those with a cubic structure, obey a universal relationship when H V and the temperature T are scaled respectively by the shear modulus G and by Gb 3 / k B, with b being the magnitude of the Burgers vector. The scaling rule is the same as that found for the temperature dependence of the critical shear stress c for the {111}<110> slip system, satisfying the relationship H V = (70-100) c .     

Deformation mechanism of long-period TiAl 2

The microstructure of long-period TiAl 2 deformed at room temperature has been studied by means of transmission electron microscopy. Dislocations, stacking faults and twins were found to contribute to the deformation. A screw superdislocation with Burgers vector d 110] dissociates into two ½ d 110] super-partial dislocations associated with an antiphase boundary. The ½; d 110] super-partial dislocation further dissociates into two Shockley partial dislocations associated with a portion of complex intrinsic stacking fault on the closest-packed {111} plane. The propagation of stacking faults on successive {111} planes yields an order twin.     

Atomistic simulations of cross-slip of jogged screw dislocations in copper

We have performed atomic-scale simulations of cross-slip processes of screw dislocations in copper, simulating jog-free dislocations as well as different types of jogged screw dislocations. Minimum-energy paths and corresponding transition state energies are obtained using the nudged-elastic-band path technique. We find low barriers and effective masses for the conservative motion along the dislocations of elementary jogs on both ordinary {111}<110> and nonoctahedral {110}<110> slip systems. The jogs are found to be constricted and therefore effectively act as pre-existing constrictions; the cross-slip activation energy is thereby dramatically reduced, yielding values in agreement with experiment.     

Anomalous ductile-brittle fracture behaviour in fcc crystals

The fracture behaviour of fcc crystals has been investigated by numerically simulating the dynamical failure of a three-dimensional notched crystal using molecular dynamics, simple interatomic potentials for a rare-gas solid and system sizes of about ten million atoms. We find that the solid fails by brittle cleavage for cracking on a {110} face growing in a [110]direction and by ductile plasticity for cracking on a {111} face growing in a [110]direction. Comparison of equilibrium surface energies on the crack face and Schmid factors on the primary slip systems indicates that the classical theories of fracture give predictions in contradiction with the simulation results. A hyperelasticity model is proposed to explain this discrepancy. This anomalous fracture behaviour of fcc crystals has a profound implication on general modelling of dynamic failure of solids.     

The Geometry of Enhancement in Multiple Regression

In linear multiple regression, “enhancement” is said to occur when R ²=b′r>r′r, where b is a p×1 vector of standardized regression coefficients and r is a p×1 vector of correlations between a criterion y and a set of standardized regressors, x. When p=1 then b≡r and enhancement cannot occur. When p=2, for all full-rank R _xx≠I, R _xx=E[xx′]=V Λ V′ (where V Λ V′ denotes the eigen decomposition of R _xx; λ ₁>λ ₂), the set B₁:={b_i:R²=b_i￠r_i=r_i￠r_i;0 < R² ￡ 1}\boldsymbol{B}_{1}:=\{\boldsymbol{b}_{i}:R^{2}=\boldsymbol{b}_{i}'\boldsymbol{r}_{i}=\boldsymbol{r}_{i}'\boldsymbol{r}_{i};0R² ￡ 1;R²l_p ￡ r_i￠r_i < R²}0p≥3 (and λ ₁>λ ₂>⋯>λ _p ), both sets contain an uncountably infinite number of vectors. Geometrical arguments demonstrate that B ₁ occurs at the intersection of two hyper-ellipsoids in ℝ ^p . Equations are provided for populating the sets B ₁ and B ₂ and for demonstrating that maximum enhancement occurs when b is collinear with the eigenvector that is associated with λ _p (the smallest eigenvalue of the predictor correlation matrix). These equations are used to illustrate the logic and the underlying geometry of enhancement in population, multiple-regression models. R code for simulating population regression models that exhibit enhancement of any degree and any number of predictors is included in Appendices A and B.     

Revealing texture architecture in a surface gradient nanostructured Al-Cu-Mg alloy

ABSTRACT

A multiscale crystallographic texture architecture in a surface gradient nanostructured Al-Cu-Mg alloy after surface sliding friction treatment (SSFT) has been revealed by a combination of electron backscatter diffraction and precession electron diffraction (PED)-assisted transmission electron microscopy (TEM) orientation mapping. Accompanying a grain structure variation from lamellar coarse grains to equiaxed nanograins, the major texture components evolve from brass {110}<112> in the coarse-grain matrix, Goss {110}<001> at a depth of ～80?μm, E {111}<011> and F {111}<112> at a depth of ～20?μm, to a mixture of rotated cube {001}<110>, E and F in the topmost surface layer. The through-thickness textural development and evolution are attributed to the cyclic loading of concurrent shear and compression during the SSFT processing. The PED-assisted orientation mapping shows good capability in mapping severe plastic-deformation-induced nanostructures with large residual strains and high defect density.     

Reply to the comments on “Room-temperature precipitation in quenched Al–Cu–Mg alloys: a model for the reaction kinetics and yield-strength development”

We present transmission electron microscopy observations and a crystallographic analysis that show that the only significant report on the observation of {112} pseudotwins in B2 structures by Goo et al. (1985, Acta metall., 3, 1725) is a misidentification of the {114} true twins.     

The 328 cm−1 infrared absorption band in type Ia diamonds

Abstract

A defect-induced peak at 328 cm^?1 in the infrared absorption spectrum of type Ia diamonds is confirmed to belong with the other absorptions (in particular, the B′ localised mode near 1370 cm^?1 and the D component of the lattice vibrations) which are associated with the {100} platelets found in these crystals. It is suggested that this absorption and other weaker absorptions found in its vicinity may be due to the bending vibrations of atomic bonds in the platelets.     

Crystal structure of the ξ phase in the Al-Si-Mg-Fe system studied by electron channelling

We have re-examined the structure of the ~ phase in a quaternary alloy previously found to have the composition Al 8 Si 6 Mg 3 Fe. Electron probe microanalysis shows that the composition of the phase is actually Al 9 Si 5 Mg 3 Fe and, based on this new chemical formula, we propose a revision of the atomic positions which does not require any substitutional disorder within the hexagonal crystal unit cell with space group P ¥ 62 m (no. 189). These Wyckoff positions are as follows: for Al, 6i and 3f; for Si, 4h and 1b; for Mg, 3g; and for Fe, 1a. Results from electron channelling experiments are consistent with these new positions while ruling out those previously reported in the literature.     

Non-dissociation of Lomer–Cottrell dislocations and 〈110〉{001} slip in silicon

Abstract

Two unexpected features have been revealed by transmission electron microscopy investigations of deformed silicon bicrystals: (a) slip of a/2 〈110〉 dislocations on {001} planes and (b) non-dissociation of Lomer–Cottrell dislocations formed by intersecting slip dislocations.     

Equivalents for a Quasivariety to be Generated by a Single Structure

We present some equivalent conditions for a quasivariety of structures to be generated by a single structure. The first such condition, called the embedding property was found by A.I. Mal′tsev in [6]. It says that if are nontrivial, then there exists such that A and B are embeddable into C. One of our equivalent conditions states that the set of quasi-identities valid in is closed under a certain Gentzen type rule which is due to J. Łoś and R. Suszko [5]. Presented by Jacek Malinowski     

Cathodoluminescence-mode imaging of dislocations in zinc oxide

Abstract

The cathodoluminescence mode in the scanning electron microscope has been used to image bands of dislocations in zinc oxide. It has been shown that dislocations lying on pyramidal, {1012}, planes are generated beneath indentations on {0001} surfaces. Basal plane dislocations lying parallel to the surface are also observed. Indentations on {1100} prismatic surfaces result in slip on {0001} and {0110} planes.     

Long-range interaction of radiation-generated self-interstitial atoms and adatoms on tungsten surface

ABSTRACT

The morphological modification of the W surface induced by specimen irradiation with 5?keV He atoms was studied at the atomic level using low-temperature ?eld ion microscope techniques. The major impact-induced damage mode on W {110} surface was found to be the formation of adatom sets produced by radiation-generated self-interstitial atoms emerging at the surface. The long-range interaction was revealed by evaluating the experimental probability density of finding two radiation-generated adatoms at a given separation in comparison with the probability density corresponding to a random distribution of adatoms. The statistically significant difference of these distributions consists of the absence or severe reduction of observed adatom pairs with separations in the range 5–11?Å. The experimental distribution was characterised by a relatively open arrangement of adatoms with the closest separation of about 11?Å. Our field ion microscope observations also reveal the self-organisation of radiation-generated W adatoms into atomic chains with the lateral interatomic separation substantially larger than the nearest-neighbor distance. These effects indicate the existence of long-range interactions between radiation-generated adatoms and radiation-generated self-interstitial atoms in the subsurface region.     

Structural changes induced by low-energy electron irradiation in GaSb

Structural changes in GaSb (001) thin films upon low-energy electron (125?keV) irradiation have been studied by in situ transmission electron microscopy. No structural changes were observed for irradiation at room temperature. However, in a sample irradiated at 473?K domains of {110} variant, rotated 90° from each other, were formed in the matrix. The average diameter of the domains was approximately 18?nm in the sample irradiated to a fluence of 4.8?×?10²⁴?electrons/m². It is considered that the domains are pseudo-{110} planes in the matrix formed by electron-irradiation-induced Shockley partial dislocations.     

Planar dissociations and recombination energy of [110] superdislocations in Ni3Al: Generalized Peierls model in combination with ab initioelectron theory

Planar dissociation configurations of the [110] superdislocation in stoichiometric Ni₃Al are investigated by the generalized Peierls model using the {111} γ-surface energies calculated by the ab initio electron theory. The dissociation into four Shockley partials with the formation of an antiphase boundary and two complex stacking fault (CSF) ribbons turned out to be the energetically most favourable configuration. For the edge superdislocation the obtained dissociation widths should be large enough to be resolved in a weakbeam image, whereas for the corresponding configuration of the screw superdislocation the CSF ribbon has a rather small width which may be beyond the limit of the resolution. A twofold dissociation involving a superlattice intrinsic stacking fault is energetically less favourable. The recombination energy of the two Shockley partials in one superpartial is found to be 0.24eV/b.     

Hydrogen-assisted damage in austenite/martensite dual-phase steel

For understanding the underlying hydrogen embrittlement mechanism in transformation-induced plasticity steels, the process of damage evolution in a model austenite/martensite dual-phase microstructure following hydrogenation was investigated through multi-scale electron channelling contrast imaging and in situ optical microscopy. Localized diffusible hydrogen in martensite causes cracking through two mechanisms: (1) interaction between {1?1?0}_M localized slip and {1?1?2}_M twin and (2) cracking of martensite–martensite grain interfaces. The former resulted in nanovoids along the {1?1?2}_M twin. The coalescence of the nanovoids generated plate-like microvoids. The latter caused shear localization on the specific plane where the crack along the martensite/martensite boundary exists, which led to additional martensite/martensite boundary cracking.