Mobility of c dislocations in Ti3, Al

Abstract

The rôle of dislocations with Burgers vectors, b, given by b = [0001] during deformation of samples of the intermetallic compound Ti₃Al has been assessed. At room temperature, the experimental evidence is consistent with these dislocations being sessile, their density and morphology being similar to that in undeformed samples. In samples deformed at 650°C and above, it is concluded that motion of these dislocations is effected by dislocation climb. The line directions of the various segments of dislocations with b= [0001] are shown to be perpendicular to planes that contain sheets of Ti atoms, with an expected tendency to exhibit a high Peierls stress.     

Dislocation dissociation in the intermetallic compound MoSi2

Abstract

The identity of dislocations which contribute to plastic deformation of polycrystalline MoSi₂ when compressed at 1400°C has been determined using transmission electron microscopy. It has been confirmed that dislocations with Burgers vectors lying parallel to ? 100 ? and ? 111 ? are activated in response to the applied stress. In addition, the deformation microstructure is characterized by the presence of networks containing dislocations with Burgers vectors parallel to ? 100], ? 110] and ? 111 ?. It has been shown that dislocations with Burgers vectors lying parallel to ? 111 ? are dissociated. A simple explanation has been developed to account for the occurrence of dissociation of particular dislocations, and on the basis of this model the dissociation is represented by

½? 111 ?→ ½? 111 ?+SISF+¼? 111 ?

where SISF stands for a superlattice intrinsic stacking fault. The SISF energy has been estimated from the separation of the partial dislocations to be about 261 mJ m^?2. Other observations of the dissociation of dislocations in MoSi₂ have been interpreted in terms of the model developed in the present work.     

Atomistic simulations of cross-slip of jogged screw dislocations in copper

We have performed atomic-scale simulations of cross-slip processes of screw dislocations in copper, simulating jog-free dislocations as well as different types of jogged screw dislocations. Minimum-energy paths and corresponding transition state energies are obtained using the nudged-elastic-band path technique. We find low barriers and effective masses for the conservative motion along the dislocations of elementary jogs on both ordinary {111}<110> and nonoctahedral {110}<110> slip systems. The jogs are found to be constricted and therefore effectively act as pre-existing constrictions; the cross-slip activation energy is thereby dramatically reduced, yielding values in agreement with experiment.     

Dislocations in Bi-Pb-Sr-Ca-Cu-O superconductors

Abstract

Dislocations and dislocation networks in superconducting Bi-Pb-Sr-Ca-Cu-O have been observed by means of TEM, confirming that this compound is a layer structure with low stacking fault energy. On the basal plane, dislocations and dislocation networks dissociate into partial dislocations and partial dislocation networks. However, the dissociation of [010] dislocations is hardly observed, which is related to the structural characteristics of the compound.     

Phase field microelasticity theory of dislocation dynamics in a polycrystal: Model and three-dimensional simulations

A three-dimensional multidislocation system in a polycrystal under applied stress is treated as a particular case of the phase field microelasticity theory of multivariant stress-induced martensitic transformations in polycrystals. This approach reduces the problem of the evolution of a dislocation system to a solution of the nonlinear integrodifferential Ginzburg-Landau equation. In this formalism, the elastic interaction between dislocations and the elastic coupling between grains are taken into consideration through exact analytical solution of the elasticity problem. The dislocation reactions, such as multiplication and annihilation, are taken into account automatically. The dislocations are 'free' to choose the optimal evolution path. Examples of three-dimensional computer simulations are considered.     

Dislocations in indented Ga0·7 Al0·3As

Abstract

Transmission electron microscope observations have been made of dislocations in Ga_0·7Al_0·3As after indentation of (001) surfaces at room temperature. Using two-beam imaging, in bright-field and weak-beam imaging, dissociated dislocations with extended stacking faults were observed both in the [110] and [110] directions. This is different from GaAs in which dissociated dislocations are seen in only one of these directions. These results are compared with published work on indented GaAs and considered in the light of possible mechanisms.     

Pop-in phenomenon in MgO and LiF: Observation of dislocation structures

This letter is based on recent progress in the observation of dislocation distributions around nanoindentations by chemical etching. This so-called nanoetching technique is used to determine the dislocation mechanisms associated with the pop-in phenomenon in MgO and LiF. Successive stages of highly controlled chemomechanical polishing have revealed that these dislocations are half-loops lying in the classical slip systems of MgO or LiF. However, they do not extend on the surface in the classical rosette-arms pattern but stay concentrated around the imprint. A mechanism of dislocation interactions, enhanced by the fact that the dislocations are suddenly nucleated in a small volume, is proposed to explain this specific distribution.     

Core structure of a〈100〉 superdislocations in a single-crystal superalloy during high-temperature and low-stress creep

A thorough TEM analysis has been carried out to study the dislocations cutting into γ′ phase in a single-crystal superalloy during uniaxial tensile creep under high-temperature and low-stress conditions. It is proved that the a〈100〉 edge superdislocation originates from the interfacial a〈100〉 dislocations and moves into the γ′ phase by pure climbing. And the dissociation of the a〈100〉 superdislocation core into two a/2〈101〉 superpartial dislocations during uniaxial tensile creep has been identified by HRTEM method for the first time.     

Non-dissociation of Lomer–Cottrell dislocations and 〈110〉{001} slip in silicon

Abstract

Two unexpected features have been revealed by transmission electron microscopy investigations of deformed silicon bicrystals: (a) slip of a/2 〈110〉 dislocations on {001} planes and (b) non-dissociation of Lomer–Cottrell dislocations formed by intersecting slip dislocations.     

How to see the Burgers vector of a quasicrystal dislocation

Abstract

We derive, in a density-wave framework, the ‘invisibility condition’ for dislocations in quasicrystals. Our results should be essential for a correct analysis of dislocations in these systems, in particular for measuring their six-dimensional Burgers vectors.     

Dissociation of dislocations in MgAl2O4 spinel deformed at low temperatures

Abstract

When spinel is deformed in compression at 400°C along 〈110〉, the primary slip plane is found to be {111} with cross-slip occurring on a {001} plane. A comparison of weak-beam images of dislocations from both systems indicates that all dislocations which belong to the primary slip plane are dissociated out of the {111} plane independent of the character of the dislocation. It is proposed that deformation occurs by motion of dislocations in their dissociated state and that the partial dislocations actually glide on parallel glide planes. Movement of these dissociated dislocations is then accompanied by a concurrent migration of the stacking fault which takes place by a local shuffling of the cations. A stacking fault energy for conservative dissociation at 400°C on {001} of 530±90mJ m^?2 has been determined from weak-beam images of screw dislocations.     

Cathodoluminescence-mode imaging of dislocations in zinc oxide

Abstract

The cathodoluminescence mode in the scanning electron microscope has been used to image bands of dislocations in zinc oxide. It has been shown that dislocations lying on pyramidal, {1012}, planes are generated beneath indentations on {0001} surfaces. Basal plane dislocations lying parallel to the surface are also observed. Indentations on {1100} prismatic surfaces result in slip on {0001} and {0110} planes.     

Transmission electron microscopy of dislocations in SrTiO3

Dislocations have been introduced in SrTiO₃ by Vickers indentation at room temperature and analysed by transmission electron microscopy. The slip systems in SrTiO₃ were identified as ?110?-{110}. ?110? dislocations are dissociated into two partial dislocations. The stacking-fault energy γSF was determined to be 136 ± 15 mJm^-2.     

Stacking-fault formation in [001] small-angle symmetric tilt grain boundaries in cubic zirconia bicrystals

Small-angle symmetric [001] tilt grain boundaries in cubic zirconia bicrystals with misorientation angles 2θ =1.0° and 2θ =5.0° have been fabricated by diffusion bonding. High-resolution electron microscopy observations revealed that the 1.0° boundary consists of a periodic array of mixed dislocations with Burgers vector b =( a /2)[101] or b = ( a /2)[101], while the 5.0° boundary consists of a periodic array of edge dislocations with Burgers vector b = ( a /2)[100], associated with stacking faults at alternate intervals. This suggests that there is a critical angle for structural transitions in the series of the [001] small-angle tilt grain boundaries.     

Dislocation nucleation and vacancy formation during high-speed deformation of fcc metals

Recently, a dislocation-free deformation mechanism was proposed by Kiritani et al. on the basis of a series of experiments where thin foils of fcc metals were deformed at very high strain rates. In the experimental study, they observed a large density of stacking fault tetrahedra but very low dislocation densities in the foils after deformation. This was interpreted as evidence for a new dislocation-free deformation mechanism, resulting in a very high vacancy production rate. In this paper we investigate this proposition using large-scale computer simulations of bulk and thin films of copper. To favour such a dislocation-free deformation mechanism, we have made dislocation nucleation very difficult by not introducing any potential dislocation sources in the initial configuration. Nevertheless, we observe the nucleation of dislocation loops, and the deformation is carried by dislocations. The dislocations are nucleated as single Shockley partials. The large stresses required before dislocations are nucleated result in a very high dislocation density, and therefore in many inelastic interactions between the dislocations. These interactions create vacancies and a very large vacancy concentration is quickly reached.     

Deformed substructures in fine-grained tetragonal zirconia

Transmission electron microscopy (TEM) has been employed to examine the deformed microstructures of a high-purity tetragonal zirconia polycrystal containing 3mol% yttria. The TEM observations reveal that piled-up and tangled dislocations are developed within grains at a high stress, but such substructures do not appear at a lower stress, except for a small number of isolated dislocations. The stress-dependent deformed microstructures suggest that the dislocation substructures observed at a high stress are not due to any experimental artefacts. Applying a model proposed by Eshelby et al. to the observed pile-up dislocations, it can be estimated that a stress concentration of the order of 14-25 is generated around multiple-grain junctions during deformation.     

Interactions between interfacial dislocations and γ/γ′ interface during high temperature – low stress creep in nickel-based single crystal superalloy

ABSTRACT

The interaction between interfacial dislocations and γ/γ′ interface is critical to the high temperature creep properties of single crystal superalloys. However, only a few studies have paid attention to the detailed structure such as local interfacial morphologies and the elemental distribution around interfacial dislocations. In this paper, the interfacial protrusions and related dislocations in a single crystal superalloy after creep at high temperature – low stress have been investigated in detail. It is found that the morphology and size of the interfacial protrusions remain almost the same during the early and middle stages of high temperature creep, which indicates a local equilibrium at the interfacial protrusions. Steps at different height are formed at the γ/γ′ interface at the initial stage of high temperature creep since dislocations could move along the γ/γ′ interface, which indicates that dislocation motion at different creep stage may affect the morphology of γ/γ′ interface.     

Threading dislocation with b=c+2a in 4H-SiC as determined by LACBED

The Burgers vectors of the so-called threading screw dislocations (a total of 28 dislocations) in 4H-SiC were determined by large-angle convergent-beam electron diffraction. A new type of TSD, that is, b = c + 2a dislocation, was identified. Thus, all of the four types of TSD predicted by Onda et al. [Phil. Mag. Lett. 93 (2013) p.591] were identified.     

Investigation of {111} stacking faults and nanotwins in epitaxial BaTiO3 thin films by high-resolution transmission electron microscopy

{111} stacking faults and nanotwins in epitaxial BaTiO₃ thin films on MgO substrates have been investigated by high-resolution transmission electron microscopy. In many cases, the stacking faults and nanotwins were found to be accompanied by partial dislocations. These partial dislocations can be classified as two different types, analogous to the situation in the fcc structure. One is of the Shockley type with the Burgers vector (a/3)<112>. The other is of the Frank type with the Burgers vector (a/3)<111>. The movements of both types of partial can lead to the {111} stacking faults and the {111} twins observed in these films.     

Experimental evidence of relaxation arising from the motion of geometrical kinks on screw dislocations in iron

Abstract

Internal friction measurements with a superimposed bias stress have provided evidence for geometrical kink migration on screw dislocations in iron. This intrinsic process causes a relaxation phenomenon in internal friction which has been identified with the occurrence of a subpeak (below 20 K) of the α-peak. The effect of different bias stress has allowed us to evaluate the kink migration energy, E ^m _k ? 0·001eV.